SICW120N120H-BP

Single FETs, MOSFETs Overview

The SICW120N120H-BP is a Silicon Carbide (SiC) MOSFET manufactured by Micro Commercial Components. It features a single channel configuration housed in a TO-247AB-3 through-hole package. Key electrical parameters include a drain-source breakdown voltage of 1.2 kV and a continuous drain current of 24 A. The device exhibits a maximum on-resistance of 200 mΩ at specified conditions. Gate-source voltage limits range from -10 V to +25 V, with a threshold voltage of 2.95 V. Total gate charge is 67 nC. Power dissipation is rated at 166 W, supporting operation between -55°C and +175°C.

Single FETs, MOSFETs Feature Summary

• Utilizes Silicon Carbide technology for enhanced thermal performance and high-voltage capability.
• Designed for through-hole mounting in the TO-247AB-3 package for robust mechanical stability.
• Features an enhancement-mode N-channel structure suitable for efficient switching applications.

Single FETs, MOSFETs Applications

• High-frequency power conversion circuits
• Industrial motor drive systems
• Uninterruptible power supply (UPS) inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix and package variant during procurement, as MCC offers related models like the SICW120N120H4-BP in different packages. Confirm availability status directly with authorized distributors, as stock levels fluctuate. Ensure the ordering documentation matches the exact part number to avoid receiving variants with different pinouts or thermal characteristics. Request the latest datasheet to confirm any recent manufacturing updates or parameter revisions before finalizing purchase orders.

Single FETs, MOSFETs Selection Notes

Select this component when a through-hole SiC MOSFET with 1.2 kV rating is required. Compare the 200 mΩ on-resistance against system conduction loss requirements. Evaluate the 24 A continuous current limit against peak load demands. Consider the TO-247AB-3 footprint compatibility with existing PCB layouts. Verify that the gate charge and threshold voltage align with the driving circuit capabilities for optimal switching efficiency.

Single FETs, MOSFETs Part Context

This part belongs to the MCC SiC MOSFET family, which includes variants such as the SICW120N120H4-BP featuring a four-terminal TO-247-4 package. The SICW120N120H-BP specifically utilizes the three-terminal TO-247AB-3 configuration. These devices are engineered for high-efficiency power electronics, leveraging silicon carbide material properties to outperform traditional silicon counterparts in high-temperature and high-voltage environments.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 1.2 kV rating, TO-247AB-3 package, and similar electrical characteristics. Cross-reference with other manufacturers' 1200V SiC MOSFETs in equivalent through-hole packages. Verify pinout compatibility and thermal resistance values before substitution. Ensure the replacement device meets the same operating temperature range and gate drive specifications.