SIDR220EP-T1-RE3

$3.68

Description：N-CHANNEL 25 V (D-S) 175C MOSFET
Series：TrenchFET® Gen IV
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:e07b36156ae5 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SIDR220EP-T1-RE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is N-CHANNEL 25 V (D-S) 175C MOSFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SIDR220EP-T1-RE3

Description：N-CHANNEL 25 V (D-S) 175C MOSFET
Series：TrenchFET® Gen IV
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：25 V
Current - Continuous Drain (Id) @ 25°C：92.8A (Ta), 415A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：0.58mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：200 nC @ 10 V
Vgs (Max)：+16V, -12V
Input Capacitance (Ciss) (Max) @ Vds：10850 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：6.25W (Ta), 415W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerPAK® SO-8DC
Package / Case：PowerPAK® SO-8

Single FETs, MOSFETs datasheet and documents for SIDR220EP-T1-RE3

SIDR220EP-T1-RE3

Single FETs, MOSFETs Overview

The SiDR220EP is a Vishay Siliconix N-Channel MOSFET utilizing TrenchFET Gen IV technology, housed in a PowerPAK SO-8DC package. It features a 25 V drain-source voltage rating and supports junction temperatures up to 175 °C. The device delivers a continuous drain current of 415 A at TC = 25 °C with a maximum on-resistance of 0.00058 Ω at VGS = 10 V. Key dynamic parameters include a typical total gate charge of 61 nC and optimized switching characteristics.

Single FETs, MOSFETs Feature Summary

TrenchFET Gen IV power MOSFET architecture
Top side cooling feature for enhanced thermal transfer
Optimized gate charge and Miller charge ratio
100% Rg and UIS tested

Single FETs, MOSFETs Applications

Synchronous rectification
High power density DC/DC conversion
Synchronous buck converter
OR-ing applications
Load switching
Battery management

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix RE3 confirms lead-free and halogen-free compliance before procurement. Confirm that the PowerPAK SO-8DC package requires appropriate surface mount soldering profiles as detailed in manufacturer application notes. Ensure design margins account for the package-limited current ratings under actual thermal conditions rather than relying solely on absolute maximums.

Single FETs, MOSFETs Selection Notes

Select this component for high-current, low-voltage applications requiring minimal conduction losses. Evaluate thermal resistance requirements carefully, as the device relies heavily on case-side cooling for optimal performance. Verify that the gate drive voltage meets the specified thresholds for the desired on-resistance levels. Consider the top-side cooling capability if standard bottom-side mounting does not provide sufficient heat dissipation for the target duty cycle.

Single FETs, MOSFETs Part Context

This part belongs to the SiDR series of Vishay Siliconix power MOSFETs designed for extreme current handling within compact footprints. The PowerPAK SO-8DC package distinguishes itself by offering dual-sided thermal paths, enabling higher power dissipation compared to traditional single-sided packages. It represents an evolution in low-voltage switching technology aimed at improving efficiency in dense power electronics designs.