SIDR578EP-T1-RE3

Single FETs, MOSFETs Overview

The SiDR578EP is a Vishay Siliconix N-Channel MOSFET utilizing TrenchFET Gen V technology, rated for 150 V drain-source voltage and operating up to 175 °C. It features an 8.8 mΩ maximum on-resistance at 10 V gate drive and supports 78 A continuous current in the PowerPAK SO-8DC package. The device exhibits optimized low RDS(on)-Qg and RDS(on)-Qoss figures of merit, with typical gate charge values of 24.5 nC at 7.5 V and 32.5 nC at 10 V.

Single FETs, MOSFETs Feature Summary

• TrenchFET Gen V power MOSFET architecture
• Optimized for lowest RDS(on)-Qg and RDS(on)-Qoss figures of merit
• 100% tested for gate resistance (Rg) and unclamped inductive switching (UIS)
• Lead-free and halogen-free compliant material categorization

Single FETs, MOSFETs Applications

• Synchronous rectification
• Primary side switch
• DC/DC converters
• OR-ing and hot swap switches
• Power supplies
• Motor drive control
• Battery management

Single FETs, MOSFETs Procurement Notes

Verify component authenticity by cross-referencing the manufacturer part number against official Vishay documentation. Confirm that the ordering suffix matches the specified lead-free and halogen-free requirements. Ensure the PowerPAK SO-8DC package dimensions align with your PCB footprint design. Validate thermal performance parameters against your specific application constraints before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for high-efficiency applications requiring low conduction losses and fast switching speeds. The optimized figure of merit makes it suitable for high-frequency DC/DC converters and synchronous rectifiers. Consider the 175 °C junction temperature rating for robust thermal operation. Verify that the 150 V breakdown voltage meets the system's peak voltage requirements.

Single FETs, MOSFETs Part Context

This single-channel N-Channel MOSFET belongs to the SiDR series from Vishay Siliconix. It is housed in the PowerPAK SO-8DC surface-mount package, designed for double-sided cooling capabilities. The device integrates advanced trench gate technology to achieve superior electrical performance compared to standard planar MOSFETs.

Single FETs, MOSFETs Replacement Considerations

Consult official Vishay substitution guides for verified alternatives. Ensure any replacement maintains compatible pinout configurations, voltage ratings, and thermal characteristics. Verify that substitute components meet the same RoHS and REACH compliance standards.

Single FETs, MOSFETs FAQ

What is the maximum junction temperature rating?

The SiDR578EP supports an operating junction and storage temperature range from -55 °C to +175 °C.

Is the device tested for unclamped inductive switching?

Yes, the datasheet specifies that 100% of the devices are tested for unclamped inductive switching (UIS).

What is the typical output capacitance value?

The typical output capacitance (Coss) is 325 pF, measured at VDS = 75 V and VGS = 0 V.