SIHB065N60E-GE3

Single FETs, MOSFETs Overview

The SiHB065N60E-GE3 is a Vishay Siliconix N-channel Power MOSFET utilizing 4th generation E series technology. It features a D2PAK (TO-263) package with a drain-source voltage of 600 V and a continuous drain current of 40 A at 25 °C case temperature. The typical on-state resistance is 0.057 Ω, with a maximum gate charge of 74 nC. Operating junction temperatures range from -55 °C to +150 °C, supporting a maximum power dissipation of 250 W.

Single FETs, MOSFETs Feature Summary

• Utilizes 4th generation E series technology for optimized performance
• Features low figure-of-merit combining on-resistance and gate charge
• Rated for unclamped inductive switching avalanche energy
• Designed to reduce both switching and conduction losses

Single FETs, MOSFETs Applications

• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• High-intensity discharge lighting
• Industrial motor drives and welding equipment

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm the packaging format. The standard suffix indicates tube packaging, while the T1 variant denotes reel packaging. Ensure compliance requirements match the intended deployment environment by checking RoHS and REACH documentation provided by the manufacturer.

Single FETs, MOSFETs Selection Notes

Select this component when high voltage blocking capability and efficient thermal management are required in surface mount designs. The D2PAK package provides robust heat dissipation suitable for industrial applications. Evaluate the total gate charge against driver capabilities to ensure adequate switching speeds within the target circuit constraints.

Single FETs, MOSFETs Part Context

This device belongs to the Vishay Siliconix E Series Power MOSFET lineup. It represents an advancement in silicon carbide-gated trench technology designed for high-efficiency power conversion. The series targets demanding applications requiring low loss characteristics and reliable operation under high thermal stress conditions.

Single FETs, MOSFETs Replacement Considerations

Direct replacements include SIHB065N60AEL-GE3 or SIHB30N60E-GE3 within the same family. Verify pinout compatibility and thermal resistance ratings before substitution. Cross-reference datasheet parameters to ensure electrical specifications meet the original design requirements.