SIHB6N80AE-GE3

$2.39

Description：E SERIES POWER MOSFET D2PAK (TO-
Series：E
Mfr：Vishay Siliconix
Package：Tube

SKU:fd91b7a118a4 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SIHB6N80AE-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is E SERIES POWER MOSFET D2PAK (TO-. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SIHB6N80AE-GE3

Description：E SERIES POWER MOSFET D2PAK (TO-
Series：E
Mfr：Vishay Siliconix
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：800 V
Current - Continuous Drain (Id) @ 25°C：5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：950mOhm @ 2A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：22.5 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：422 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：62.5W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-263 (D2PAK)
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for SIHB6N80AE-GE3

SIHB6N80AE-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SIHB6N80AE-GE3 is an N-channel power MOSFET from the E Series, packaged in a lead-free D2PAK (TO-263). It features a drain-source voltage of 800 V and a continuous drain current of 5 A at 25 °C case temperature. The device has a typical on-resistance of 0.826 Ω at VGS = 10 V and a maximum total gate charge of 22.5 nC. It supports an operating junction temperature range from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

Low figure-of-merit combining Ron and Qg for reduced switching and conduction losses
Avalanche energy rated for unclamped inductive switching robustness
Integrated Zener diode providing electrostatic discharge protection

Single FETs, MOSFETs Applications

Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)
High-intensity discharge lighting
Industrial motor drives

Single FETs, MOSFETs Procurement Notes

Verify component authenticity by checking the manufacturer's marking code against official datasheet documentation. Confirm RoHS compliance status through the specific material categorization report provided by Vishay. Ensure that the ordering suffix matches the required package and lead finish specifications before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when high-voltage blocking capability is required alongside low gate charge characteristics. The TO-263 package provides adequate thermal dissipation for moderate current applications. Evaluate the avalanche energy rating if the circuit design involves inductive load switching without external clamping protection.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix E Series Power MOSFET lineup. It utilizes standard silicon technology optimized for high-voltage performance. The series focuses on balancing conduction resistance with switching speed to improve overall system efficiency in power conversion topologies.