SIHD240N60E-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SIHD240N60E-GE3 is a single N-channel enhancement mode MOSFET utilizing fourth-generation E Series technology. It features a 600 V drain-source voltage rating and a maximum on-state resistance of 0.240 Ω at 10 V gate drive. The device supports a continuous drain current of 12 A at 25 °C case temperature, with a total gate charge maximum of 23 nC. It operates within a junction temperature range of -55 °C to +150 °C and provides an avalanche energy rating of 81 mJ.

Single FETs, MOSFETs Feature Summary

• Fourth-generation E Series technology designed for low figure-of-merit Ron x Qg
• Reduced switching and conduction losses through low effective capacitance
• Rated for unclamped inductive switching (UIS) avalanche energy

Single FETs, MOSFETs Applications

• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• High-intensity discharge lighting
• Industrial motor drives

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's documentation to confirm the required packaging format. The datasheet lists multiple suffixes including GE3, T1-GE3, T4-GE3, and T5-GE3 for this component family. Ensure the selected variant matches the intended manufacturing process requirements before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high-voltage switching with optimized efficiency metrics. The low effective output capacitance contributes to reduced switching losses. Verify that the thermal management design accommodates the specified linear derating factor and maximum power dissipation limits under expected operating conditions.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix E Series Power MOSFET lineup. The series utilizes advanced silicon technology to achieve improved performance characteristics compared to previous generations. The DPAK package provides a standardized footprint suitable for surface-mount assembly in various power electronics designs.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference data or manufacturer substitution guides for verified alternatives. Do not assume functional equivalence based solely on matching voltage and current ratings without verifying pinout compatibility and dynamic parameters.