SIHF18N50C-E3

Single FETs, MOSFETs Overview

The Vishay Siliconix SIHF18N50C-E3 is a single N-channel power MOSFET utilizing 6.2nd generation planar FET technology, housed in a TO-220 FULLPAK package. It features a drain-source voltage of 500 V and a continuous drain current of 18 A at 25 °C case temperature. The device exhibits a maximum on-state resistance of 0.270 Ω at VGS = 10 V and ID = 10 A. Key dynamic parameters include a total gate charge of 76 nC (max), turn-on delay time of 80 ns, rise time of 27 ns, turn-off delay time of 32 ns, and fall time of 44 ns. It supports a linear derating factor of 0.3 W/°C and operates within a junction temperature range of -55 to +150 °C.

Single FETs, MOSFETs Feature Summary

• Compliant with RoHS Directive 2002/95/EC
• 100% avalanche tested for ruggedness
• High peak current capability
• Improved gate charge and reverse recovery characteristics

Single FETs, MOSFETs Applications

• High-frequency switching power supplies
• Motor control circuits
• DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix E3 confirms lead-free compliance and RoHS directive adherence before procurement. Confirm the TO-220 FULLPAK package variant matches the required thermal dissipation needs. Ensure the ordering part number aligns exactly with the Vishay datasheet specifications to avoid pinout or rating mismatches during integration.

Single FETs, MOSFETs Selection Notes

Select this component when a high-voltage N-channel MOSFET with low figure-of-merit Ron x Qg is required. The TO-220 FULLPAK package offers improved thermal performance compared to standard packages. Consider the 500 V breakdown voltage and 18 A continuous current rating for appropriate load matching. Verify that the drive circuitry can supply the necessary gate charge for efficient switching.

Single FETs, MOSFETs Part Context

This component belongs to the Vishay Siliconix SiHP/SiHF series of 500 V power MOSFETs. It represents an extension of the company's 6.2nd generation N-channel planar FET technology into the TO-220 FULLPAK form factor. The series is designed to provide enhanced performance metrics including reduced switching losses and improved thermal handling capabilities for industrial applications.

Single FETs, MOSFETs Replacement Considerations

SiHP18N50C-E3 serves as the direct through-hole equivalent with identical electrical ratings but utilizes a standard TO-220 package instead of the FULLPAK variant.