Single FETs, MOSFETs SIHJ240N60E-T1-GE3 product image

SIHJ240N60E-T1-GE3

$2.53
  • Description:MOSFET N-CH 600V 12A PPAK SO-8
  • Series:E
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:3df4e44b0536 Category: Brand:

  
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SIHJ240N60E-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 600V 12A PPAK SO-8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SIHJ240N60E-T1-GE3

  • Description:MOSFET N-CH 600V 12A PPAK SO-8
  • Series:E
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):600 V
  • Current - Continuous Drain (Id) @ 25°C:12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:240mOhm @ 5.5A, 10V
  • Vgs(th) (Max) @ Id:5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:783 pF @ 100 V
  • FET Feature:-
  • Power Dissipation (Max):89W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:PowerPAK® SO-8
  • Package / Case:PowerPAK® SO-8

Single FETs, MOSFETs datasheet and documents for SIHJ240N60E-T1-GE3

SIHJ240N60E-T1-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SIHJ240N60E-T1-GE3 is a single N-channel Power MOSFET from the E Series, utilizing fourth-generation technology. It features a 600 V drain-source voltage and a maximum continuous drain current of 12 A at 25 °C case temperature. The device has a typical on-state resistance of 0.208 Ω at VGS = 10 V and a maximum total gate charge of 23 nC. It is housed in a lead-free, halogen-free PowerPAK SO-8L surface-mount package.

Single FETs, MOSFETs Feature Summary

  • Fourth-generation E series technology designed for low figure-of-merit Ron x Qg
  • Rated for unclamped inductive switching (UIS) avalanche energy
  • Optimized for reduced switching and conduction losses

Single FETs, MOSFETs Applications

  • Server and telecom power supplies
  • Switch mode power supplies (SMPS)
  • Power factor correction power supplies (PFC)
  • High-intensity discharge lighting
  • Industrial motor drives

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm the package type and reel configuration. The -T1 suffix indicates a tape-and-reel packaging format. Ensure compliance with RoHS and REACH requirements by checking the material categorization documentation provided by the manufacturer before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when a compact surface-mount solution is required for high-voltage switching applications. The PowerPAK SO-8L package offers thermal performance suitable for moderate power dissipation needs. Evaluate the 0.208 Ω on-resistance against system efficiency targets and ensure the 600 V rating exceeds the maximum circuit voltage.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix E Series of power MOSFETs. The series focuses on optimizing the trade-off between on-resistance and gate charge to improve overall converter efficiency. The SIHJ240N60E variant specifically targets applications requiring robust performance in a small footprint compared to traditional through-hole packages.

Single FETs, MOSFETs Replacement Considerations

The datasheet lists SIHJ240N60E-T2-GE3 as an alternative ordering option within the same family.

SIHJ240N60E-T1-GE3SIHJ240N60E-T1-GE3
$2.53
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