SIHP180N60E-GE3

Single FETs, MOSFETs Overview

The SiHP180N60E-GE3 is a Vishay Siliconix N-Channel Power MOSFET utilizing fourth-generation E Series technology. It features a TO-220AB package with a drain-source voltage (VDS) of 600 V and a gate-source voltage (VGS) rating of ±30 V. The device exhibits a typical on-state resistance (RDS(on)) of 0.155 Ω at 25 °C and a maximum total gate charge (Qg) of 33 nC. Continuous drain current reaches 19 A at 25 °C case temperature, while power dissipation is rated at 156 W. Operating junction temperatures range from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

• Fourth-generation E series technology designed for low figure-of-merit Ron x Qg
• Reduced switching and conduction losses through low effective capacitance Co(er)
• Rated for unclamped inductive switching (UIS) avalanche energy

Single FETs, MOSFETs Applications

• Server and telecom power supplies
• Switch mode power supplies (SMPS)
• Power factor correction power supplies (PFC)
• High-intensity discharge (HID) lighting
• Industrial motor drives and welding equipment

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix GE3 confirms lead-free and halogen-free compliance status before procurement. Ensure the component matches the exact Vishay document number 92103 specifications. Confirm that the TO-220AB package dimensions align with your PCB footprint requirements. Validate that the thermal management solution supports the specified maximum power dissipation limits under your operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when high-voltage blocking capability and low switching losses are required. The TO-220AB package facilitates through-hole mounting for applications needing robust mechanical stability. Consider the 600 V breakdown voltage for primary-side or high-voltage secondary-side circuits. Evaluate the 156 W power dissipation against your thermal design constraints to ensure reliable operation within the specified temperature range.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix E Series Power MOSFET family, which emphasizes efficiency improvements over previous generations. The SiHP180N60E variant specifically targets applications requiring a balance between low on-resistance and fast switching speeds. It serves as a high-performance discrete semiconductor solution for modern power conversion architectures.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include SIHG180N60E-GE3 and SIHA186N60EF-GE3, provided pinout compatibility and electrical ratings meet system requirements. Verify package variations such as TO-247AC or TO-220FP do not impact mechanical fit.

Single FETs, MOSFETs FAQ

Is the SiHP180N60E rated for avalanche energy?

Yes, the datasheet specifies an unclamped inductive switching (UIS) avalanche energy rating of 111 mJ.

What is the maximum gate-source voltage allowed?

The absolute maximum rating for gate-source voltage is ±30 V.