SIR424DP-T1-GE3

$0.97

Description：MOSFET N-CH 20V 30A PPAK SO-8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:fbb672e2ed94 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SIR424DP-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 20V 30A PPAK SO-8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SIR424DP-T1-GE3

Description：MOSFET N-CH 20V 30A PPAK SO-8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：5.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：35 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1250 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：4.8W (Ta), 41.7W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerPAK® SO-8
Package / Case：PowerPAK® SO-8

Single FETs, MOSFETs datasheet and documents for SIR424DP-T1-GE3

SIR424DP-T1-GE3

Single FETs, MOSFETs Overview

The SiR424DP-T1-GE3 is a Vishay Siliconix N-channel MOSFET utilizing TrenchFET technology. It features a 20 V drain-source voltage rating and operates in an enhancement mode within a PowerPAK SO-8 package. The device exhibits a maximum on-state resistance of 5.5 mΩ at VGS = 10 V and 7.4 mΩ at VGS = 4.5 V, supporting a continuous drain current of 30 A. Key dynamic parameters include a typical gate charge of 9.6 nC and a forward transconductance of 80 S. Thermal performance includes a junction-to-case resistance of 2.4 °C/W.

Single FETs, MOSFETs Feature Summary

TrenchFET power MOSFET architecture for optimized switching efficiency
Leadless PowerPAK SO-8 package design providing enhanced thermal dissipation
Validated for 100% unclamped inductive switching (UIS) reliability

Single FETs, MOSFETs Applications

Buck converters
Point-of-load (POL) regulation
DC/DC conversion circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm lead-free and halogen-free compliance status. Ensure that the component matches the exact datasheet revision referenced during design validation. Confirm that the package dimensions align with the recommended minimum pad patterns specified in application notes for optimal thermal performance.

Single FETs, MOSFETs Selection Notes

Select this component when low on-state resistance is required within a compact surface-mount footprint. Evaluate the thermal resistance characteristics against the expected ambient temperature and board copper area. Consider the gate charge requirements relative to the driving circuit capabilities to ensure efficient switching transitions.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix SIR series of single-channel N-channel MOSFETs. It utilizes the PowerPAK SO-8 package, which shares the same footprint as standard SO-8 devices but offers superior thermal conductivity comparable to DPAK packages. The series is designed for high-current applications requiring minimal board space.