Single FETs, MOSFETs SIR800ADP-T1-RE3 product image

SIR800ADP-T1-RE3

$0.88
  • Description:MOSFET N-CH 20V 50.2A/177A PPAK
  • Series:TrenchFET® Gen IV
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:0d5f79c0e0b6 Category: Brand:

  
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SIR800ADP-T1-RE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 20V 50.2A/177A PPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SIR800ADP-T1-RE3

  • Description:MOSFET N-CH 20V 50.2A/177A PPAK
  • Series:TrenchFET® Gen IV
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:50.2A (Ta), 177A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V
  • Rds On (Max) @ Id, Vgs:1.35mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:53 nC @ 10 V
  • Vgs (Max):+12V, -8V
  • Input Capacitance (Ciss) (Max) @ Vds:3415 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):5W (Ta), 62.5W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:PowerPAK® SO-8
  • Package / Case:PowerPAK® SO-8

Single FETs, MOSFETs datasheet and documents for SIR800ADP-T1-RE3

SIR800ADP-T1-RE3

Single FETs, MOSFETs Overview

The SiR800ADP is a Vishay Siliconix N-Channel MOSFET utilizing TrenchFET Gen IV technology. It features a 20 V drain-source voltage rating and a single configuration within a PowerPAK SO-8 package. The device supports a continuous drain current of 177 A at a case temperature of 25 °C, with an on-state resistance maximum of 1.35 mΩ at VGS = 10 V. Typical gate charge is 18.2 nC at VGS = 4.5 V. Operating junction temperatures range from -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

  • TrenchFET Gen IV power MOSFET architecture
  • Optimized gate charge parameters for reduced switching loss
  • 100% tested for gate resistance and unclamped inductive switching

Single FETs, MOSFETs Applications

  • Synchronous rectification
  • High power density DC/DC conversion
  • Synchronous buck converter circuits
  • Load switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm lead-free and halogen-free compliance status. Confirm that the PowerPAK SO-8 package variant matches the required footprint dimensions. Ensure thermal management designs account for the specified junction-to-case thermal resistance ratings under steady-state conditions.

Single FETs, MOSFETs Selection Notes

Select this component for low-voltage high-current applications requiring minimal conduction losses. Evaluate the gate charge specifications against driver capabilities to optimize switching performance. Consider the thermal derating curves when determining continuous current limits based on ambient operating temperatures.

Single FETs, MOSFETs Part Context

This part belongs to the SiR series of N-Channel MOSFETs manufactured by Vishay Siliconix. It utilizes the PowerPAK SO-8 surface-mount package designed for efficient heat dissipation. The device integrates advanced trench technology to achieve high current density within a compact form factor suitable for modern power electronics.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference lists or datasheets for verified substitutes. Verify that any replacement maintains identical pinout configurations, voltage ratings, and thermal characteristics to ensure circuit compatibility.

SIR800ADP-T1-RE3SIR800ADP-T1-RE3
$0.88
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