SIS447DN-T1-GE3

Single FETs, MOSFETs Overview

The SiS447DN-T1-GE3 is a Vishay Siliconix P-Channel MOSFET utilizing TrenchFET Gen III technology. It features a -20 V drain-source voltage and a maximum continuous drain current of -18 A. The device offers low on-state resistance, specified as 0.0071 Ω at VGS = -10 V and -20 A. Total gate charge is typically 57.5 nC at VGS = -4.5 V. It is housed in a compact PowerPAK 1212-8 surface-mount package with a junction temperature range of -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

• TrenchFET Gen III P-Channel power MOSFET architecture
• 100% Rg and UIS tested for reliability

Single FETs, MOSFETs Applications

• Battery switch
• Load switch
• Power management

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-T1-GE3' against the manufacturer's datasheet to confirm lead-free and halogen-free compliance status. Ensure that the PowerPAK 1212-8 package dimensions and thermal pad requirements match the target PCB layout design specifications before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a single-channel P-Channel MOSFET with a -20 V rating. Consider the low thermal impedance of the PowerPAK 1212-8 package for space-constrained designs. Validate that the required gate drive voltage aligns with the specified threshold and on-resistance characteristics for optimal performance.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix SiS series of power MOSFETs. It utilizes the PowerPAK 1212-8 package, which provides a small footprint comparable to TSOP-6 while offering superior thermal performance compared to standard SMT packages like SO-8 or TSSOP-8.

Single FETs, MOSFETs Replacement Considerations

Consult official Vishay documentation for qualified replacement parts. Verify pinout compatibility and electrical parameters such as VDS, ID, and RDS(on) when evaluating alternative components.