Single FETs, MOSFETs SISA14BDN-T1-GE3 product image

SISA14BDN-T1-GE3

$0.67
  • Description:N-CHANNEL 30-V (D-S) MOSFET POWE
  • Series:TrenchFET® Gen IV
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:23b4f7719a54 Category: Brand:

  
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SISA14BDN-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is N-CHANNEL 30-V (D-S) MOSFET POWE. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SISA14BDN-T1-GE3

  • Description:N-CHANNEL 30-V (D-S) MOSFET POWE
  • Series:TrenchFET® Gen IV
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:21A (Ta), 72A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:5.38mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id:2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
  • Vgs (Max):+20V, -16V
  • Input Capacitance (Ciss) (Max) @ Vds:917 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):3.8W (Ta), 45W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:PowerPAK® 1212-8
  • Package / Case:PowerPAK® 1212-8

Single FETs, MOSFETs datasheet and documents for SISA14BDN-T1-GE3

SISA14BDN-T1-GE3

Single FETs, MOSFETs Overview

The SiSA14BDN is a Vishay Siliconix N-Channel 30 V (D-S) MOSFET utilizing TrenchFET Gen IV technology. It features a maximum drain-source voltage of 30 V and a continuous drain current of 72 A at TC = 25 °C. The device offers a maximum on-state resistance of 0.00538 Ω at VGS = 10 V and 0.00702 Ω at VGS = 4.5 V. Typical gate charge is 6.6 nC at VGS = 4.5 V. It operates within a junction temperature range of -55 to +150 °C and is housed in a PowerPAK 1212-8PT package.

Single FETs, MOSFETs Feature Summary

  • TrenchFET Gen IV power MOSFET architecture
  • 100% Rg and UIS tested for reliability

Single FETs, MOSFETs Applications

  • High power density DC/DC
  • Synchronous rectification
  • VRMs and embedded DC/DC
  • Battery protection

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix, such as -T1-GE3, against official documentation to confirm packaging details like reel specifications. Confirm RoHS compliance status via the manufacturer's material categorization resources. Ensure that thermal management designs account for the specified junction-to-case and junction-to-ambient resistance values under actual operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low on-resistance and high current handling in a compact surface-mount footprint. Consider the 30 V rating and 72 A continuous current capability for synchronous rectification or DC/DC converter designs. Evaluate thermal performance based on the specific ambient and case temperatures expected in the target application environment.

Single FETs, MOSFETs Part Context

This part belongs to the SiSA series of N-Channel MOSFETs from Vishay Siliconix. It utilizes the PowerPAK 1212-8PT leadless package designed for high power density applications. The device incorporates TrenchFET technology to achieve low on-resistance and fast switching characteristics suitable for modern power management systems.

Single FETs, MOSFETs Replacement Considerations

Consult official Vishay documentation for verified substitute part numbers. Cross-referencing should be performed carefully to ensure compatibility with voltage, current, and thermal requirements.

SISA14BDN-T1-GE3SISA14BDN-T1-GE3
$0.67
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