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SISA14BDN-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is N-CHANNEL 30-V (D-S) MOSFET POWE. Review the specifications below when checking this part for your BOM.
The SiSA14BDN is a Vishay Siliconix N-Channel 30 V (D-S) MOSFET utilizing TrenchFET Gen IV technology. It features a maximum drain-source voltage of 30 V and a continuous drain current of 72 A at TC = 25 °C. The device offers a maximum on-state resistance of 0.00538 Ω at VGS = 10 V and 0.00702 Ω at VGS = 4.5 V. Typical gate charge is 6.6 nC at VGS = 4.5 V. It operates within a junction temperature range of -55 to +150 °C and is housed in a PowerPAK 1212-8PT package.
Verify the specific ordering suffix, such as -T1-GE3, against official documentation to confirm packaging details like reel specifications. Confirm RoHS compliance status via the manufacturer's material categorization resources. Ensure that thermal management designs account for the specified junction-to-case and junction-to-ambient resistance values under actual operating conditions.
Select this component for applications requiring low on-resistance and high current handling in a compact surface-mount footprint. Consider the 30 V rating and 72 A continuous current capability for synchronous rectification or DC/DC converter designs. Evaluate thermal performance based on the specific ambient and case temperatures expected in the target application environment.
This part belongs to the SiSA series of N-Channel MOSFETs from Vishay Siliconix. It utilizes the PowerPAK 1212-8PT leadless package designed for high power density applications. The device incorporates TrenchFET technology to achieve low on-resistance and fast switching characteristics suitable for modern power management systems.
Consult official Vishay documentation for verified substitute part numbers. Cross-referencing should be performed carefully to ensure compatibility with voltage, current, and thermal requirements.
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