SISS94DN-T1-GE3

$0.95

Description：MOSFET N-CH 200V 5.4A/19.5A PPAK
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:c32231703464 Category: Single FETs, MOSFETs Brand: Vishay Siliconix

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Product introduction

SISS94DN-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 200V 5.4A/19.5A PPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SISS94DN-T1-GE3

Description：MOSFET N-CH 200V 5.4A/19.5A PPAK
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：200 V
Current - Continuous Drain (Id) @ 25°C：5.4A (Ta), 19.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：7.5V, 10V
Rds On (Max) @ Id, Vgs：75mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：21 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：350 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：5.1W (Ta), 65.8W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerPAK® 1212-8S
Package / Case：PowerPAK® 1212-8S

Single FETs, MOSFETs datasheet and documents for SISS94DN-T1-GE3

SISS94DN-T1-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SISS94DN-T1-GE3 is a single N-channel MOSFET utilizing TrenchFET and ThunderFET technologies. It features a 200 V drain-source voltage rating and a maximum on-resistance of 75 mΩ at VGS = 10 V. The device supports a continuous drain current of 19.5 A at TC = 25 °C. Packaged in a leadless PowerPAK 1212-8S, it offers optimized gate charge and switching performance for high-efficiency power applications.

Single FETs, MOSFETs Feature Summary

Integrates TrenchFET with ThunderFET technology to optimize the balance between on-resistance, gate charge, and output charge.
Features a leadless PowerPAK 1212-8S package designed for efficient surface mounting and thermal dissipation.
Includes 100% gate resistance and unclamped inductive switching (UIS) testing for enhanced reliability.

Single FETs, MOSFETs Applications

Primary side switching
Synchronous rectification
DC/DC topologies
Boost converter
Motor drive control

Single FETs, MOSFETs Procurement Notes

Verify component authenticity by cross-referencing the manufacturer part number and datasheet revision against official Vishay documentation. Confirm that the specific ordering suffix matches the required lead-free and halogen-free specifications. Ensure compatibility with the PowerPAK 1212-8S footprint dimensions and soldering profiles during procurement planning.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high-voltage handling up to 200 V combined with low conduction losses. Evaluate the thermal requirements based on the junction-to-case resistance and ensure the application operates within the specified temperature range. Consider the gate charge characteristics when designing driver circuits for optimal switching efficiency.

Single FETs, MOSFETs Part Context

This component belongs to the Vishay Siliconix discrete semiconductor portfolio, specifically within the MOSFET category. It utilizes silicon technology and is manufactured under the TrenchFET brand. The device represents an advancement in power management components, focusing on reducing energy loss in switching applications through proprietary cell architecture.

Single FETs, MOSFETs Replacement Considerations

Consult official Vishay documentation for verified substitute part numbers. Do not assume functional equivalence with other manufacturers' devices without validating pinout, electrical parameters, and thermal characteristics against the original specifications.