SN74HCS266DR

Inverter Gates Overview

The SN74HCS266DR is a quadruple 2-input XNOR gate featuring open-drain outputs and Schmitt-trigger inputs. It operates within a supply voltage range of 2V to 6V, supporting an ambient temperature range from -40°C to +125°C. The device provides ±7.8mA output drive at 6V and exhibits low power consumption with typical ICC of 100nA. Propagation delay ranges from 5ns to 40ns depending on voltage. It is housed in a 14-pin SOIC package.

Inverter Gates Feature Summary

• Schmitt-trigger inputs provide hysteresis for noise rejection and tolerance to slow input signals
• Open-drain CMOS outputs allow wired-AND configurations without bus contention
• Extended operating temperature range supports harsh environments

Inverter Gates Applications

• Detecting phase differences in input signals
• Creating selectable inverters or buffers via control inputs
• Controlling clock source polarity

Inverter Gates Procurement Notes

Verify the specific ordering suffix 'DR' corresponds to the SOIC-14 package and tape-and-reel carrier format. Confirm RoHS compliance and lead finish specifications match project requirements. Ensure design accounts for open-drain limitations requiring external pull-up resistors for high-state logic levels.

Inverter Gates Selection Notes

Select this component when XNOR functionality combined with noise immunity is required. The open-drain architecture suits applications needing wired-logic connections. Verify that the extended temperature range and wide voltage operation align with system constraints compared to standard CMOS alternatives.

Inverter Gates Part Context

Part of the Texas Instruments HCS (High-Speed CMOS) logic family. Designed for robust digital signal processing where input integrity is critical. The SN74HCS266DR variant specifically utilizes the D (SOIC) package option for surface-mount assembly.

Inverter Gates Replacement Considerations

SN74HCS266PWR offers identical electrical characteristics in a TSSOP-14 package.