SPB04N60S5ATMA1

Single FETs, MOSFETs Overview

The SPB04N60S5ATMA1 is a single N-channel CoolMOS S5 power MOSFET manufactured by Infineon Technologies. It features a 600 V drain-source breakdown voltage and supports a continuous collector current of 4.5 A at 25°C, with a pulsed current rating of 13.5 A. The device utilizes D2PAK (TO-263) surface-mount packaging and exhibits a maximum on-state resistance of 950 mΩ. Thermal performance includes a junction-to-case thermal resistance of 2.5 K/W, allowing operation within a temperature range of -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• Utilizes CoolMOS S5 technology for optimized high-voltage switching performance
• Designed for efficient power management in DC applications up to 600V
• Provides robust thermal handling capabilities through low thermal resistance

Single FETs, MOSFETs Applications

• High-power DC power supplies
• Industrial motor control systems
• Uninterruptible power supply (UPS) units

Single FETs, MOSFETs Procurement Notes

Verify component authenticity against official Infineon documentation due to potential availability constraints. Confirm package integrity and marking consistency upon receipt. Ensure storage conditions comply with moisture sensitivity levels specified in the datasheet. Cross-reference ordering suffixes to guarantee exact electrical parameter matching. Validate supplier authorization status before finalizing acquisition.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring reliable 600V switching with moderate current capacity. Evaluate thermal management requirements based on the 2.5 K/W junction-to-case resistance. Consider the 950 mΩ on-resistance impact on conduction losses during steady-state operation. Ensure gate drive voltages remain within safe operating limits to prevent device degradation.

Single FETs, MOSFETs Part Context

This part belongs to the CoolMOS S5 family, representing advanced superjunction MOSFET technology from Infineon. It serves as an enhanced successor to previous generations, offering improved figure-of-merit characteristics. The series targets efficiency improvements in medium-power conversion applications where voltage ratings exceed standard silicon capabilities.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include STB9NK80Z from STMicroelectronics. Verify pinout compatibility and thermal specifications when transitioning between manufacturers. Ensure voltage and current derating curves align with existing circuit design margins.