SQD50P08-25L_GE3

Single FETs, MOSFETs Overview

The SQD50P08-25L_GE3 is a Vishay Siliconix automotive-grade P-channel MOSFET utilizing TrenchFET technology. It features an 80 V drain-source voltage and a continuous drain current of -50 A at 25 °C case temperature. The device exhibits a maximum on-resistance of 0.025 Ω at VGS = -10 V and 0.031 Ω at VGS = -4.5 V. It operates within a junction temperature range of -55 °C to +175 °C, with a maximum power dissipation of 136 W at 25 °C. The component is housed in a TO-252 (DPAK) package.

Single FETs, MOSFETs Feature Summary

• AEC-Q101 qualified for automotive reliability standards
• TrenchFET Power MOSFET architecture
• 100% gate resistance and unclamped inductive switching tested

Single FETs, MOSFETs Applications

• Automotive electronic systems requiring high-reliability switching
• Low-side load switch applications
• Power management circuits operating within specified thermal limits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix GE3 confirms lead-free and halogen-free compliance as stated in the datasheet. Confirm that the requested part number matches the exact electrical specifications required for the target application, particularly regarding the 80 V rating and TO-252 package dimensions. Ensure sourcing channels provide valid traceability documentation for automotive-grade components.

Single FETs, MOSFETs Selection Notes

Select this component when an automotive-qualified P-channel MOSFET with an 80 V breakdown voltage is required. The low on-resistance supports efficient power handling in single-channel configurations. Consider the thermal resistance ratings and safe operating area constraints during circuit design to ensure operation remains within the specified junction temperature limits under expected load conditions.

Single FETs, MOSFETs Part Context

This device belongs to the Vishay SQD series of automotive-grade MOSFETs. It utilizes TrenchFET technology to achieve low on-resistance and fast switching characteristics. The product is designed specifically for demanding environments, featuring robust testing including 100% gate resistance and UIS verification to ensure reliability in automotive applications.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the 80 V rating, P-channel configuration, and TO-252 package. Verify equivalent RDS(on) values and thermal performance. Cross-reference AEC-Q101 qualification status if automotive reliability is mandatory.