Single FETs, MOSFETs SQJA62EP-T1_GE3 product image

SQJA62EP-T1_GE3

$1.21
  • Description:MOSFET N-CH 60V 60A PPAK SO-8
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:cf1ca09c33a0 Category: Brand:

  
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SQJA62EP-T1_GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET N-CH 60V 60A PPAK SO-8. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SQJA62EP-T1_GE3

  • Description:MOSFET N-CH 60V 60A PPAK SO-8
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:4.5mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:85 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:5100 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):68W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:PowerPAK® SO-8
  • Package / Case:PowerPAK® SO-8

Single FETs, MOSFETs datasheet and documents for SQJA62EP-T1_GE3

SQJA62EP-T1_GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SQJA62EP-T1_GE3 is an automotive-grade N-channel power MOSFET utilizing TrenchFET technology. It features a 60 V drain-source voltage rating and supports a continuous drain current of 75 A at 25 °C case temperature. The device offers a maximum on-resistance of 4.5 mΩ at VGS = 10 V and 6.2 mΩ at VGS = 4.5 V. Packaged in a leadless PowerPAK SO-8L, it operates within a junction temperature range of -55 °C to +175 °C and is qualified under AEC-Q101 standards.

Single FETs, MOSFETs Feature Summary

  • AEC-Q101 qualified for automotive reliability requirements
  • TrenchFET power MOSFET architecture for optimized performance
  • Leadless PowerPAK SO-8L package design for efficient thermal dissipation

Single FETs, MOSFETs Applications

  • Automotive power distribution systems
  • High-side and low-side load switch applications
  • DC-DC converter circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official documentation to confirm compliance with material categorization and RoHS directives. Confirm that the component meets the required AEC-Q101 qualification status for your target application environment. Ensure proper handling procedures are followed due to the exposed copper terminals characteristic of the leadless package construction.

Single FETs, MOSFETs Selection Notes

Select this component when a 60 V N-channel MOSFET with high current capability is required in a compact surface-mount footprint. Consider the low on-resistance values for minimizing conduction losses in power management designs. Evaluate the thermal resistance characteristics relative to the intended PCB layout and cooling strategy to ensure operation remains within safe limits.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix SQJA series of automotive-grade MOSFETs. It utilizes TrenchFET technology to achieve low on-resistance within the PowerPAK SO-8L package. The series is designed specifically for demanding automotive environments requiring high reliability and robust performance under varying thermal conditions.

Single FETs, MOSFETs Replacement Considerations

Consult official Vishay documentation for verified substitute part numbers. Do not assume functional equivalence based solely on package or voltage ratings without cross-referencing datasheet specifications.

SQJA62EP-T1_GE3SQJA62EP-T1_GE3
$1.21
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