Single FETs, MOSFETs SQM40081EL_GE3 product image

SQM40081EL_GE3

$2.14
  • Description:MOSFET P-CH 40V 50A TO263
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:e0f058ed5552 Category: Brand:

  
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SQM40081EL_GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 40V 50A TO263. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SQM40081EL_GE3

  • Description:MOSFET P-CH 40V 50A TO263
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:8.5mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:230 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:9950 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):107W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-263 (D2PAK)
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for SQM40081EL_GE3

SQM40081EL_GE3

Single FETs, MOSFETs Overview

The SQM40081EL_GE3 is an automotive-grade P-Channel MOSFET utilizing TrenchFET technology. It features a -40 V drain-source voltage and supports a continuous drain current of -50 A at 25 °C case temperature. The device exhibits a maximum on-state resistance of 0.0085 Ω at VGS = -10 V and 0.0105 Ω at VGS = -4.5 V. Packaged in a TO-263 (D2PAK) housing, it operates within a junction temperature range of -55 °C to +175 °C and has a maximum power dissipation of 107 W.

Single FETs, MOSFETs Feature Summary

  • AEC-Q101 qualified for automotive reliability standards
  • TrenchFET power MOSFET architecture with low thermal resistance package
  • 100% tested for gate charge and single pulse avalanche capability

Single FETs, MOSFETs Applications

  • Automotive load switching applications
  • High-side power control circuits
  • Power management modules requiring ruggedized semiconductor protection

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Vishay documentation to confirm compliance with RoHS directives and material categorization requirements. Confirm that the requested component matches the exact part number SQM40081EL_GE3 to ensure correct polarity and electrical ratings. Validate that the supplier provides traceability data consistent with automotive industry quality standards.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring a robust P-Channel switch rated for -40 V operation. Ensure the gate drive voltage meets the specified thresholds for optimal RDS(on) performance. Verify that the PCB layout accommodates the TO-263 package dimensions and provides adequate copper area for thermal dissipation to maintain safe operating temperatures under load.

Single FETs, MOSFETs Part Context

This component belongs to the Vishay Siliconix SQM series of automotive MOSFETs. The series utilizes TrenchFET technology to achieve low on-resistance and high efficiency. These devices are engineered specifically for demanding automotive environments, offering enhanced ruggedness and thermal stability compared to standard industrial counterparts.

Single FETs, MOSFETs Replacement Considerations

Consult official Vishay cross-reference documentation for verified substitute part numbers. Do not assume functional equivalence based solely on similar voltage or current ratings without verifying pinout compatibility and thermal characteristics.

SQM40081EL_GE3SQM40081EL_GE3
$2.14
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