SRT13 R0G

Single Diodes Overview

The SRT13 R0G is a silicon Schottky barrier rectifier manufactured by Taiwan Semiconductor Corporation. It features a single diode configuration housed in the TS-1 axial through-hole package. The device supports a maximum repetitive reverse voltage of 30 V and an average forward rectified current of 1 A. Key electrical characteristics include a maximum forward voltage drop of 550 mV at 1 A and a maximum reverse leakage current of 500 µA at 30 V. The component withstands a non-repetitive peak forward surge current of 25 A and operates within a junction temperature range of -55°C to +125°C.

Single Diodes Feature Summary

• Utilizes silicon Schottky technology for low forward voltage drop and high efficiency.
• Incorporates a guardring structure to provide protection against overvoltage conditions.
• Designed with high surge current capability to handle transient loads.

Single Diodes Applications

• General purpose rectification in power supply circuits
• Freewheeling diodes in inductive load switching applications
• DC-DC converter output rectification

Single Diodes Procurement Notes

Verify the specific ordering suffix R0G against the manufacturer's datasheet to confirm compliance with RoHS Directive 2011/65/EU and WEEE 2002/96/EC standards. Confirm halogen-free status according to IEC 61249-2-21 definitions. Ensure the TS-1 axial leaded package matches the target PCB footprint requirements before finalizing procurement.

Single Diodes Selection Notes

Select this component when a through-hole Schottky rectifier is required for low-voltage, moderate-current applications. The 30 V rating suits low-side rectification or clamping duties. Compare the 550 mV forward voltage against standard PN junction diodes to evaluate conduction loss improvements. Verify that the 1 A continuous current rating aligns with the thermal management capabilities of the intended enclosure design.

Single Diodes Part Context

This part belongs to the SRT series of Schottky barrier rectifiers from Taiwan Semiconductor. The series utilizes silicon planar die technology optimized for high-speed switching and low power loss. The TS-1 package provides a compact axial form factor suitable for automated insertion processes in traditional electronic assembly lines.

Single Diodes Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-reference with other 1 A, 30 V Schottky diodes in the TS-1 package only after verifying pinout compatibility and thermal derating curves.