SSM3J133TU,LF

$0.37

Description：MOSFET P-CH 20V 5.5A UFM
Series：U-MOSVI
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:4662f4f0d60b Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

SSM3J133TU,LF is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is MOSFET P-CH 20V 5.5A UFM. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SSM3J133TU,LF

Description：MOSFET P-CH 20V 5.5A UFM
Series：U-MOSVI
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：29.8mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id：1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：12.8 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：840 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：500mW (Ta)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：UFM
Package / Case：3-SMD, Flat Leads

Single FETs, MOSFETs datasheet and documents for SSM3J133TU,LF

SSM3J133TU,LF

Single FETs, MOSFETs Overview

The SSM3J133TU,LF is a surface-mount P-channel MOSFET from Toshiba Semiconductor and Storage, utilizing U-MOSVI technology. It features a 20V drain-source voltage rating and supports a continuous drain current of 5.5A at 25°C ambient temperature. The device operates with a maximum power dissipation of 500mW and includes a gate-source voltage limit of ±8V. Key electrical characteristics include a maximum threshold voltage of 1V at 1mA drain current and a maximum gate charge of 12.8nC at 4.5V. Input capacitance is specified at 840pF under 10V drain-source conditions.

Single FETs, MOSFETs Feature Summary

Utilizes U-MOSVI silicon technology for enhanced performance in surface-mount applications
Designed for low-voltage switching operations with a 20V breakdown capability
Optimized gate drive requirements suitable for standard logic-level control interfaces

Single FETs, MOSFETs Applications

DC-DC converter output stages
Low-side or high-side load switching circuits
Battery protection modules

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix configuration against the manufacturer's official datasheet to ensure compatibility with required automotive or industrial standards. Confirm that the UFM package dimensions align with the target PCB footprint. Cross-reference the part number with authorized distributors to validate authenticity and traceability before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a compact P-channel solution is required for 20V systems. The UFM package offers a balance between thermal performance and board space efficiency. Ensure the application duty cycle remains within the 500mW power dissipation limits defined for the operating temperature range.

Single FETs, MOSFETs Part Context

This device belongs to the SSM3J series of single N-channel and P-channel MOSFETs manufactured by Toshiba Semiconductor and Storage. The series employs advanced planar cell technology to achieve low on-resistance and fast switching speeds within small outline packages suitable for high-density electronic designs.