SSM3J15FS,LF

Single FETs, MOSFETs Overview

The SSM3J15FS,LF is a single P-channel enhancement-mode MOSFET manufactured by Toshiba Semiconductor and Storage. It features a 30 V drain-source breakdown voltage (Vdss) and supports a continuous drain current (Id) of 100 mA at 25°C ambient temperature. The device exhibits a maximum on-resistance (Rds(on)) of 12 Ohms when driven at a gate-source voltage (Vgs) of 4 V with a drain current of 10 mA. The gate threshold voltage (Vgs(th)) is specified at a maximum of 1.7 V under a 100 µA test condition. Maximum ratings include a ±20 V gate-source voltage limit and a power dissipation (Pd) of 100 mW. The component operates within a junction temperature range up to +150°C and is housed in an SSM surface-mount package.

Single FETs, MOSFETs Feature Summary

• Single P-channel configuration designed for small-signal switching applications
• Enhancement mode operation with low gate threshold voltage for efficient drive compatibility
• Automotive-grade qualification compliant with AEC-Q101 standards

Single FETs, MOSFETs Applications

• Small-signal high-speed switching circuits
• Low-power load switching applications
• Automotive electronic control modules requiring AEC-Q101 compliance

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix LF against the manufacturer's datasheet to confirm lead-free status and material composition. Confirm that the SSM package designation matches the required footprint for your PCB layout. Ensure the ordering part number aligns exactly with the requested electrical parameters, as variations may exist within the series. Cross-reference the AEC-Q101 qualification status if automotive reliability is a mandatory requirement for your design.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring a compact P-channel switch with moderate current handling capabilities. The 12 Ohm on-resistance at low drive voltages makes it suitable for logic-level interfacing where minimal gate charge is preferred. Consider the 100 mA current limit when sizing for load requirements. The AEC-Q101 qualification ensures suitability for automotive environments, distinguishing it from standard commercial grade alternatives in the same form factor.

Single FETs, MOSFETs Part Context

This device belongs to Toshiba's discrete semiconductor transistor portfolio, specifically categorized under single FET MOSFETs. It utilizes silicon technology optimized for surface-mount assembly. The SSM package provides a compact solution for space-constrained designs. As part of the broader MOSFET family, it offers standardized pinouts and thermal characteristics consistent with Toshiba's small-signal switching products.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes must match the P-channel polarity, 30 V minimum Vdss, and SSM package type. Verify that alternative components meet or exceed the 100 mA Id rating and maintain comparable Rds(on) specifications at similar drive voltages. Ensure any replacement also holds AEC-Q101 certification if the original application mandates automotive-grade reliability.