SSM3K310T(TE85L,F)

Single FETs, MOSFETs Overview

The SSM3K310T is a silicon N-channel MOSFET designed for high-speed switching applications. It features a 20 V drain-source voltage rating and supports continuous drain currents up to 5.0 A, with pulse currents reaching 10.0 A. The device offers low on-resistance values ranging from 66 mΩ at 1.5 V gate drive down to 28 mΩ at 4.0 V. Key electrical characteristics include a gate threshold voltage between 0.35 V and 1.0 V, input capacitance of 1120 pF, and total gate charge of 14.8 nC. Power dissipation is rated at 700 mW when mounted on an FR4 board.

Single FETs, MOSFETs Feature Summary

• Optimized for 1.5 V drive operation to support low-voltage logic interfaces
• Low ON-resistance across multiple gate voltage levels for efficient power management
• High-speed switching capability with defined turn-on and turn-off times

Single FETs, MOSFETs Applications

• High-speed switching circuits
• DC-DC converter designs
• Power management systems requiring low-voltage drive compatibility

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix TE85L,F against manufacturer documentation to confirm reel packaging and tape specifications. Ensure compliance with RoHS directives and environmental regulations relevant to your region before procurement. Confirm that the absolute maximum ratings align with your system's operational limits to maintain reliability standards.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low gate drive voltages and fast switching speeds. Evaluate thermal performance based on the specified power dissipation and thermal impedance curves. Consider the input capacitance and gate charge parameters for driver selection in high-frequency switching environments to ensure optimal efficiency and signal integrity.

Single FETs, MOSFETs Part Context

This part belongs to Toshiba's field effect transistor lineup, specifically engineered as a silicon N-channel MOS type. It is housed in a compact TSM package suitable for surface mount technology. The device is intended for commercial electronic applications where space constraints and switching efficiency are critical design factors.

Single FETs, MOSFETs Replacement Considerations

Consult official Toshiba substitution guides or datasheets for verified equivalent parts. Cross-referencing pinouts, voltage ratings, and thermal characteristics is essential when considering alternative components to ensure circuit compatibility.

Single FETs, MOSFETs FAQ

What is the maximum drain-source voltage rating?

The absolute maximum rating for Drain-Source voltage (VDS) is 20 V.

How does the ON-resistance vary with gate voltage?

RDS(ON) decreases as gate voltage increases, ranging from a maximum of 66 mΩ at VGS = 1.5 V to 28 mΩ at VGS = 4.0 V.