SSM3K59CTB,L3F

$0.47

Description：MOSFET N-CH 40V 2A CST3B
Series：U-MOSVII-H
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:c48932defac7 Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

SSM3K59CTB,L3F is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is MOSFET N-CH 40V 2A CST3B. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for SSM3K59CTB,L3F

Description：MOSFET N-CH 40V 2A CST3B
Series：U-MOSVII-H
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 8V
Rds On (Max) @ Id, Vgs：215mOhm @ 1A, 8V
Vgs(th) (Max) @ Id：1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：1.1 nC @ 4.2 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：130 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：CST3B
Package / Case：3-SMD, No Lead

Single FETs, MOSFETs datasheet and documents for SSM3K59CTB,L3F

SSM3K59CTB,L3F

Single FETs, MOSFETs Overview

The SSM3K59CTB is a silicon N-channel MOSFET manufactured by Toshiba Semiconductor and Storage. It features a CST3B package with Gate, Source, and Drain pin assignments. Key electrical parameters include a drain-source voltage of 40 V, continuous drain current of 2.0 A, and power dissipation of 1000 mW. The device supports low on-resistance values: 250 mΩ at VGS=1.8V, 210 mΩ at VGS=2.5V, 185 mΩ at VGS=4.5V, and 175 mΩ at VGS=8.0V. Operating temperature ranges from -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

Supports 1.8-V gate drive voltage for low-voltage applications.
Provides low drain-source on-resistance across various gate drive voltages.

Single FETs, MOSFETs Applications

DC-DC Converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and manufacturer part number against official Toshiba documentation before procurement. Confirm that the CST3B package dimensions and pinout match the design requirements. Ensure compliance with RoHS directives and check for any specific handling precautions regarding electrostatic discharge during assembly.

Single FETs, MOSFETs Selection Notes

Select this component when a low-voltage N-channel MOSFET with high efficiency is required. The low on-resistance at 1.8V makes it suitable for battery-powered or energy-efficient systems. Verify thermal management capabilities as power dissipation depends on board layout and ambient conditions.

Single FETs, MOSFETs Part Context

This component belongs to the Toshiba Silicon N-Channel MOS series. It is designed for surface-mount applications requiring compact packaging. The CST3B package provides a small footprint suitable for dense PCB layouts. Commercial production started in January 2015.

Single FETs, MOSFETs Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Consult Toshiba sales representatives for potential alternatives if this part is discontinued or unavailable.