Single FETs, MOSFETs STB180N55F3 product image

STB180N55F3

$6.08
  • Description:MOSFET N-CH 55V 120A D2PAK
  • Series:STripFET™
  • Mfr:STMicroelectronics
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:85702b69b27f Category: Brand:

  
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STB180N55F3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 55V 120A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for STB180N55F3

  • Description:MOSFET N-CH 55V 120A D2PAK
  • Series:STripFET™
  • Mfr:STMicroelectronics
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):55 V
  • Current - Continuous Drain (Id) @ 25°C:120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:3.5mOhm @ 60A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:100 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:6800 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):330W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:D2PAK
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for STB180N55F3

STB180N55F3

Single FETs, MOSFETs Overview

The STB180N55F3 is an N-channel enhancement mode Power MOSFET manufactured using the STripFET process. It features a D2PAK package with a drain-source voltage of 55V, a continuous drain current of 120A, and a maximum power dissipation of 330W at 25°C case temperature. The device exhibits an ultra-low on-resistance ranging from 2.9mΩ to 3.5mΩ typ/max depending on conditions. It supports a gate-source voltage of ±20V, operates within a junction temperature range of -55°C to 175°C, and includes rugged avalanche characteristics verified by 100% avalanche testing.

Single FETs, MOSFETs Feature Summary

  • Utilizes unique strip-based manufacturing process for high packing density and low on-resistance
  • Features rugged avalanche characteristics with 100% avalanche testing verification
  • Designed for switching applications with low gate charge

Single FETs, MOSFETs Applications

  • Switching applications

Single FETs, MOSFETs Procurement Notes

Verify component status as this part is marked obsolete in official documentation. Confirm availability through authorized distributors or secondary markets if sourcing is required. Ensure compatibility with existing PCB footprints designed for the D2PAK package. Review datasheet revision history for any technical updates prior to implementation.

Single FETs, MOSFETs Selection Notes

Select based on the requirement for a 55V N-channel MOSFET in a D2PAK surface-mount package. Consider the 120A continuous current rating and 330W power dissipation capability for thermal management design. Evaluate the low on-resistance values for efficiency requirements in switching circuits. Verify that the operating temperature range meets system environmental specifications.

Single FETs, MOSFETs Part Context

This component belongs to the STripFET family of power MOSFETs from STMicroelectronics. It shares similar technological foundations with other devices in the series, utilizing the single feature size strip-based process. The D2PAK packaging variant offers a compact solution for high-current applications compared to through-hole alternatives like the TO-220 version.

Single FETs, MOSFETs Replacement Considerations

The STP180N55F3 is a confirmed substitute part number available in a TO-220 package. Both parts share identical electrical ratings and functionality but differ in physical mounting style.

STB180N55F3STB180N55F3
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