STD1HNC60T4

Single FETs, MOSFETs Overview

The STD1HNC60 is an N-channel PowerMESH II MOSFET rated for 600 V drain-source voltage and 2 A continuous drain current. It features a typical on-resistance of 4 Ω at VGS = 10 V. The device is available in IPAK (TO-251) and DPAK (TO-252) packages. Key electrical characteristics include a gate threshold voltage of 2–4 V, total gate charge of 11.3 nC, and avalanche energy capability of 120 mJ. Thermal resistance from junction to case is typically 1.5 °C/W.

Single FETs, MOSFETs Feature Summary

• PowerMESH II technology provides optimized Ron*area figure of merit with minimized gate charge.
• Extremely high dv/dt capability ensures robust performance during demanding switching transitions.
• 100% avalanche tested for enhanced ruggedness and reliability under inductive load conditions.

Single FETs, MOSFETs Applications

• High current, high speed switching
• Switch mode power supplies (SMPS)
• DC-AC converters for welding equipment
• Uninterruptible power supplies (UPS)
• Motor driver circuits

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized STMicroelectronics distributors or certified partners. Confirm package type (IPAK or DPAK) matches design requirements. Check datasheet revisions for updated thermal and electrical specifications. Ensure storage and handling comply with ESD protection standards. Validate compatibility with existing system voltage and current ratings before integration.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring high-voltage blocking capability with moderate current handling. Consider the 4 Ω on-resistance for efficiency calculations at low current levels. Evaluate thermal management needs based on the specified junction-to-case resistance. Ensure gate drive voltage supports the 2–4 V threshold for reliable turn-on. Verify avalanche energy limits align with circuit inductance and switching frequency.

Single FETs, MOSFETs Part Context

This device belongs to STMicroelectronics' PowerMESH II family, an evolution of the original MESH OVERLAY technology. The series focuses on improving switching speed and ruggedness while maintaining low on-resistance. It targets industrial and consumer power conversion markets where reliability and compact packaging are critical.

Single FETs, MOSFETs Replacement Considerations

No direct public substitute part numbers are confirmed in the provided documentation. Cross-reference with other 600 V N-channel MOSFETs only if electrical parameters and package dimensions match exactly. Verify that alternative devices meet the same avalanche testing and dv/dt requirements.

Single FETs, MOSFETs FAQ

What is the maximum repetitive avalanche energy for the STD1HNC60?

The single pulse avalanche energy is 120 mJ when starting at Tj = 25 °C, ID = IAR, and VDD = 50 V.

Does the STD1HNC60 have an intrinsic body diode?

Yes, it includes a source-drain diode with a forward voltage of 1.6 V at ISD = 2 A and a reverse recovery time of 480 ns.

What packages are available for this MOSFET?

The STD1HNC60 is offered in both IPAK (TO-251) and DPAK (TO-252) surface-mount packages.