STD2HNK60Z-1

Single FETs, MOSFETs Overview

The STD2HNK60Z-1 is a Zener-protected N-channel Power MOSFET developed using STMicroelectronics' SuperMESH technology. It features a 600 V drain-source voltage and a maximum continuous drain current of 2 A. The device has a typical on-resistance of 3.5 Ω and a gate threshold voltage of 3.75 V. Key electrical parameters include an input bias capacitance of 170 pF, a gate charge of 10 nC at 10 V, and a power dissipation rating of 45 W. Switching characteristics consist of an 8 ns turn-on delay, 22 ns turn-off delay, 30 ns rise time, and 25 ns fall time. It operates within a temperature range of -55 °C to 150 °C.

Single FETs, MOSFETs Feature Summary

• SuperMESH technology optimization for significantly reduced on-resistance
• Integrated internal Zener protection between gate and source
• High dv/dt capability designed for demanding applications
• 100% avalanche tested for robustness

Single FETs, MOSFETs Applications

• High-voltage power conversion circuits
• Switch-mode power supplies (SMPS)
• Industrial motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-1' against the manufacturer's official datasheet to confirm package type and tape-and-reel specifications. Ensure the component meets RoHS compliance requirements for your target market. Cross-reference the part number with the latest STMicroelectronics documentation to validate availability status and any potential obsolescence notices before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component when a 600 V breakdown voltage and 2 A continuous current capacity are required in a through-hole IPAK package. The integrated Zener diode simplifies gate drive circuitry by providing inherent overvoltage protection. Consider the 3.5 Ω on-resistance and 45 W power dissipation limits to ensure adequate thermal management solutions are implemented for the intended operating environment.

Single FETs, MOSFETs Part Context

This device belongs to the SuperMESH series of high-voltage N-channel MOSFETs from STMicroelectronics. The series represents an extreme optimization of the established PowerMESH layout, balancing low on-resistance with high dv/dt performance. The STD2HNK60Z-1 variant specifically utilizes the IPAK (TO-251) through-hole package, distinguishing it from surface-mount counterparts like the DPAK or TO-LL versions within the same product family.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes within the same SuperMESH series include the STD2HNK60Z (DPAK package) and STD2NK60Z-1 (IPAK package). Verify pinout compatibility and thermal resistance differences when replacing with these variants. For higher current requirements, consider the STP4NK60ZFP or STB4NK60ZT4, noting their different package types and lower on-resistance values.