STD3N65M6

$0.40

Description：MOSFET N-CH 650V DPAK
Series：MDmesh™ M6
Mfr：STMicroelectronics
Package：Tape & Reel (TR)

SKU:c6d2e0fca77c Category: Single FETs, MOSFETs Brand: STMicroelectronics

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

STD3N65M6 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 650V DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for STD3N65M6

Description：MOSFET N-CH 650V DPAK
Series：MDmesh™ M6
Mfr：STMicroelectronics
Package：Tape & Reel (TR)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：3.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：0V, 10V
Rds On (Max) @ Id, Vgs：1.5Ohm @ 1.75A, 10V
Vgs(th) (Max) @ Id：3.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：6 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：150 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：45W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：DPAK
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for STD3N65M6

STD3N65M6

Single FETs, MOSFETs Overview

The STD3N65M6 is an N-channel Power MOSFET from the MDmesh M6 family, housed in a DPAK (TO-252) package. It features a drain-source breakdown voltage of 650 V and a continuous drain current of 3.5 A at 25 °C case temperature. The device has a maximum static drain-source on-resistance of 1.5 Ω and a typical value of 1.4 Ω. Total gate charge is typically 6 nC. It operates within a junction temperature range of -55 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

MDmesh M6 super-junction technology providing reduced switching losses and lower RDS(on) per area compared to previous generations.
Integrated Zener protection between gate and source terminals.
Verified for unclamped inductive load switching with 100% avalanche testing.

Single FETs, MOSFETs Applications

General switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant (Type A or Type C) required for your PCB footprint design, as mechanical dimensions differ between them. Confirm that the component status aligns with long-term supply requirements, as availability may vary by region. Ensure thermal management solutions account for the specified junction-to-case thermal resistance values under actual operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high-voltage blocking capability in a compact surface-mount form factor. The low gate charge supports efficient drive circuits. Evaluate the thermal performance against the absolute maximum ratings, particularly the pulsed drain current limits defined by the safe operating area curves, to ensure reliability under transient loads.

Single FETs, MOSFETs Part Context

This part belongs to the MDmesh M6 series of super-junction power MOSFETs manufactured by STMicroelectronics. The series targets high-efficiency power conversion scenarios. The MDmesh M6 technology represents an evolution in super-junction architecture, focusing on improved switching behavior and reduced conduction losses relative to earlier iterations of the product line.