Single FETs, MOSFETs STD3NK50Z-1 product image

STD3NK50Z-1

$0.99
  • Description:MOSFET N-CH 500V 2.3A IPAK
  • Series:SuperMESH™
  • Mfr:STMicroelectronics
  • Package:Tube

SKU:12ae7c0d5228 Category: Brand:

  
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STD3NK50Z-1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 500V 2.3A IPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for STD3NK50Z-1

  • Description:MOSFET N-CH 500V 2.3A IPAK
  • Series:SuperMESH™
  • Mfr:STMicroelectronics
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):500 V
  • Current - Continuous Drain (Id) @ 25°C:2.3A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:3.3Ohm @ 1.15A, 10V
  • Vgs(th) (Max) @ Id:4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs:15 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:280 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):45W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:IPAK
  • Package / Case:TO-251-3 Short Leads, IPAK, TO-251AA

Single FETs, MOSFETs datasheet and documents for STD3NK50Z-1

STD3NK50Z-1

Single FETs, MOSFETs Overview

The STD3NK50Z-1 is a Zener-protected N-channel Power MOSFET from the SuperMESH series, manufactured by STMicroelectronics. It features a 500 V drain-source voltage rating and a maximum continuous drain current of 2.3 A at 25°C case temperature. The device utilizes an IPAK (TO-251) package with three pins. Key electrical parameters include a typical on-resistance of 3.3 Ω at VGS = 10 V and ID = 1.15 A, and a gate threshold voltage ranging from 3 V to 4.5 V. Total gate charge is typically 15 nC at VGS = 10 V. The component supports a peak diode recovery voltage slope of 4.5 V/ns and includes integrated back-to-back Zener diodes for enhanced ESD protection.

Single FETs, MOSFETs Feature Summary

  • SuperMESH technology optimization providing extremely high dv/dt capability and minimized gate charge.
  • Integrated back-to-back Zener diodes between gate and source for enhanced ESD protection and transient absorption.
  • 100% avalanche tested for reliability in demanding applications.

Single FETs, MOSFETs Applications

  • AC Adaptors
  • Battery Chargers
  • Switch Mode Power Supplies (SMPS)
  • Lighting

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-1' corresponds to the IPAK tube packaging configuration as defined in the datasheet order code table. Confirm that the required current handling aligns with the 2.3 A continuous rating at 25°C case temperature. Ensure thermal management strategies account for the junction-to-ambient resistance characteristics specified for the IPAK package type during operation.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage switching applications requiring robust dv/dt performance and internal gate protection. The IPAK package offers a surface-mount alternative to through-hole options while maintaining thermal efficiency. Consider the 3.3 Ω on-resistance when calculating conduction losses at the intended operating current levels. Verify compatibility with drive voltages given the 3 V to 4.5 V threshold range.

Single FETs, MOSFETs Part Context

This part belongs to the SuperMESH series, which represents an extreme optimization of ST's strip-based PowerMESH layout. The series complements ST's full range of high-voltage MOSFETs, including MDmesh products, by significantly reducing on-resistance while ensuring high dv/dt capability for demanding applications.

Single FETs, MOSFETs Replacement Considerations

The datasheet lists STD3NK50Z as a variant within the same family, differing primarily in packaging (DPAK tape & reel vs. IPAK tube). No other direct substitute part numbers are explicitly confirmed in the provided documentation.

STD3NK50Z-1STD3NK50Z-1
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