STF9NK60ZD

Single FETs, MOSFETs Overview

The STF9NK60ZD is an N-channel SuperFREDMesh Power MOSFET from STMicroelectronics, housed in a TO-220FP package. It features a 600 V drain-source voltage rating and a maximum continuous drain current of 7 A at 25 °C case temperature. The device exhibits a maximum on-resistance of 0.95 Ω at VGS = 10 V and ID = 3.5 A. Total dissipation is rated at 30 W at 25 °C case temperature. Key electrical parameters include a gate threshold voltage ranging from 2.5 V to 4.5 V, total gate charge of 41 nC typ., and input capacitance of 1110 pF.

Single FETs, MOSFETs Feature Summary

• SuperFREDMesh technology integrates fast body-drain recovery diode with reduced on-resistance and Zener gate protection.
• Very high dv/dt capability ensures robust performance under demanding switching conditions.
• Integrated back-to-back Zener diodes provide enhanced ESD protection and absorb gate-source voltage transients.
• Gate charge is minimized for efficient drive requirements.

Single FETs, MOSFETs Applications

• Switching applications
• High-efficiency bridge topologies
• ZVS phase-shift converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code matches the required package variant, as the SuperFREDMesh series includes D²PAK and standard TO-220 options alongside the TO-220FP. Confirm that the thermal resistance values align with your PCB footprint or heatsink design constraints. Ensure the application environment remains within the specified operating junction temperature range of -55 °C to 150 °C. Check for any updated revision history regarding mechanical data changes.

Single FETs, MOSFETs Selection Notes

Select this component when high dv/dt ruggedness and integrated fast recovery diode characteristics are required. The TO-220FP package offers a specific thermal profile compared to standard through-hole variants. Consider the 0.95 Ω maximum RDS(on) limit for conduction loss calculations. Verify compatibility with the 30 V maximum gate-source voltage rating during driver selection.

Single FETs, MOSFETs Part Context

This device belongs to the SuperFREDMesh series by STMicroelectronics, which complements the FDmesh advanced technology. The series combines the advantages of low on-resistance, Zener gate protection, and very high dv/dt capability with a fast body-drain recovery diode. It is designed for high-voltage power switching applications requiring robust avalanche performance.

Single FETs, MOSFETs Replacement Considerations

STB9NK60ZD (D²PAK package), STP9NK60ZD (TO-220 package). These parts share identical electrical specifications but differ in physical packaging and thermal dissipation ratings.

Single FETs, MOSFETs FAQ

What is the peak diode recovery voltage slope capability?

The device supports a peak diode recovery voltage slope of 15 V/ns under specified test conditions.

Does the device include avalanche testing?

Yes, the device is 100% avalanche tested, supporting repetitive or non-repetitive avalanche currents up to 7 A.

How does the internal diode perform at elevated temperatures?

At Tj = 150 °C, the reverse recovery time increases to 176 ns and the reverse recovery charge rises to 880 nC when ISD = 7 A.