STFI28N60M2

$5.22

Description：MOSFET N-CH 600V 22A I2PAKFP
Series：MDmesh™ II Plus
Mfr：STMicroelectronics
Package：Tube

SKU:0be352b773b5 Category: Single FETs, MOSFETs Brand: STMicroelectronics

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Product introduction

STFI28N60M2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 600V 22A I2PAKFP. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for STFI28N60M2

Description：MOSFET N-CH 600V 22A I2PAKFP
Series：MDmesh™ II Plus
Mfr：STMicroelectronics
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：150mOhm @ 11A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：36 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：1440 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：30W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-281 (I2PAKFP)
Package / Case：TO-262-3 Full Pack, I2PAK

Single FETs, MOSFETs datasheet and documents for STFI28N60M2

STFI28N60M2

Single FETs, MOSFETs Overview

STFI28N60M2 is an N-channel enhancement mode power MOSFET from STMicroelectronics, utilizing MDmesh M2 technology. It features a maximum drain-source voltage of 650 V and a continuous drain current of 18 A at case temperature. The device offers a typical on-resistance of 190 mΩ and a gate charge of 29 nC at 10 V. Packaged in the I2PAKFP through-hole format with three pins, it supports a junction temperature range from -55 °C to +150 °C and has a maximum power dissipation of 30 W.

Single FETs, MOSFETs Feature Summary

MDmesh M2 technology provides low on-resistance and optimized switching characteristics for high-efficiency converters.
Extremely low gate charge and excellent output capacitance profile enhance switching performance.
100% avalanche tested for robustness under transient conditions.
Integrated Zener protection safeguards the gate structure.

Single FETs, MOSFETs Applications

High-efficiency DC-DC converters
General-purpose power switching applications
Industrial power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific package designation against official datasheets, as distributor listings may vary between TO-220 variants. Confirm the exact Rds(on) max value and thermal resistance parameters required for your thermal design calculations before finalizing the component selection.

Single FETs, MOSFETs Selection Notes

Select this component when a through-hole N-channel MOSFET with 650 V rating is required. Compare the 190 mΩ on-resistance and 29 nC gate charge against alternative packages like TO-220 or D2PAK if board space constraints differ. Ensure the 30 W power dissipation capability meets the thermal management requirements of the target application.

Single FETs, MOSFETs Part Context

The STFI28N60M2 belongs to the MDmesh M2 series, designed for high-voltage power switching. It shares technological similarities with other members like STF28N60M2 but differs in package configuration. This series emphasizes low gate charge and ruggedness for demanding converter topologies.