STI12NM50N

Single FETs, MOSFETs Overview

The STI12NM50N is an N-channel Power MOSFET utilizing MDmesh II technology. It features a 500 V breakdown voltage, a typical on-resistance of 0.29 Ω, and a continuous drain current of 11 A. The device is available in multiple packages including TO-220, DPAK, D2PAK, I2PAK, and TO-220FP.

Single FETs, MOSFETs Feature Summary

• Combines vertical structure with strip layout for low on-resistance and gate charge
• Developed using second-generation MDmesh technology for high efficiency
• Suitable for demanding high-efficiency converter applications

Single FETs, MOSFETs Applications

• High efficiency power converters
• Switching mode power supplies (SMPS)
• Industrial power conversion systems

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant required, as the part number covers multiple form factors including TO-220, DPAK, D2PAK, I2PAK, and TO-220FP. Confirm that the 0.29 Ohm on-resistance specification aligns with your thermal and electrical design constraints for the target application environment.

Single FETs, MOSFETs Selection Notes

Select this component when a 500 V rating and moderate current handling are required alongside low switching losses. The MDmesh II technology offers improved performance over standard planar MOSFETs. Ensure the chosen package variant meets the board space and thermal dissipation requirements of the final assembly.

Single FETs, MOSFETs Part Context

This device belongs to STMicroelectronics' MDmesh II Power MOSFET portfolio, which focuses on reducing on-resistance and gate charge through advanced strip layout techniques. It is designed for high-efficiency applications where minimizing conduction and switching losses is critical for overall system performance.

Single FETs, MOSFETs Replacement Considerations

The STI12NM50N is documented as a technically viable drop-in replacement for the FDP12N50 due to matching I2PAK (TO-262) package compatibility, similar 500V Vdss rating, and comparable current capabilities.