STI23NM60N

$2.65

Description：MOSFET N-CH 600V 19A I2PAK
Series：MDmesh™ II
Mfr：STMicroelectronics
Package：Tube

SKU:b36046c897ea Category: Single FETs, MOSFETs Brand: STMicroelectronics

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Product introduction

STI23NM60N is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 600V 19A I2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for STI23NM60N

Description：MOSFET N-CH 600V 19A I2PAK
Series：MDmesh™ II
Mfr：STMicroelectronics
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：180mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：60 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：2050 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：150W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：I2PAK
Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA

Single FETs, MOSFETs datasheet and documents for STI23NM60N

STI23NM60N

Single FETs, MOSFETs Overview

The STI23NM60N is an N-channel enhancement mode MOSFET from the FDmesh series by STMicroelectronics. It features a 600 V drain-source voltage rating and a continuous drain current of 19 A at case temperature. The device utilizes I2PAK through-hole packaging with three pins. Key electrical characteristics include a maximum on-state resistance of 150 mΩ, a gate threshold voltage range of 3 V to 5 V, and a typical gate charge of 70 nC at 10 V. It operates within a temperature range of -55 °C to +150 °C and has a power dissipation capacity of 150 W at case temperature.

Single FETs, MOSFETs Feature Summary

Utilizes FDmesh technology for optimized switching performance and low conduction losses.
Designed for high-voltage applications with a 600 V breakdown capability.
Provides robust thermal management suitable for through-hole mounting environments.

Single FETs, MOSFETs Applications

High-frequency power conversion circuits
Industrial motor control systems
Uninterruptible power supply (UPS) inverters

Single FETs, MOSFETs Procurement Notes

Verify component authenticity and datasheet revisions upon acquisition. Confirm package integrity and pin alignment prior to assembly. Check for obsolescence status as availability may be limited. Ensure storage conditions comply with moisture sensitivity levels specified in the official documentation.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high voltage isolation and moderate current handling in through-hole configurations. Compare on-resistance and gate charge requirements against specific switching frequency needs. Evaluate thermal dissipation capabilities relative to the intended heat sink or PCB layout constraints.

Single FETs, MOSFETs Part Context

This part belongs to the FDmesh family of N-channel MOSFETs, which are engineered for efficiency in power switching applications. The I2PAK package variant offers mechanical stability for industrial environments. It serves as a discrete solution for medium-power electronics where surface-mount alternatives are unsuitable.

Single FETs, MOSFETs Replacement Considerations

STB23NM60N is a documented surface-mount equivalent in the same series. Verify pin compatibility and thermal performance differences when substituting between through-hole and SMD packages.