STL17N65M5

Single FETs, MOSFETs Overview

The STL17N65M5 is an N-channel enhancement-mode Power MOSFET from STMicroelectronics' MDmesh M5 series. It features a 650 V drain-source voltage (Vdss) and a continuous drain current (Id) of 17 A. The device exhibits a typical on-resistance (Rds(on)) of 175 mΩ at 10 V gate drive. Packaged in a compact PowerFLAT 8x8 HV surface-mount format, it supports a maximum power dissipation of 70 W. Operating parameters include a gate-source voltage limit of 25 V, a gate charge of 22 nC, and a junction temperature range spanning -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

• MDmesh M5 technology combines vertical process innovation with horizontal layout for low on-resistance per silicon area
• PowerFLAT 8x8 HV package provides high thermal efficiency and space-saving design
• Optimized for energy-conscious applications requiring high reliability and compact form factors

Single FETs, MOSFETs Applications

• Hard switching power supplies
• High-efficiency DC-DC converters
• Industrial motor control systems

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix codes against official datasheets to confirm exact electrical tolerances and packaging variants. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer prior to ordering. Ensure storage conditions meet semiconductor handling standards to prevent electrostatic discharge damage during transit and assembly.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring a balance between low conduction losses and fast switching speeds in a small footprint. The 175 mΩ Rds(on) offers efficient performance for moderate current loads up to 17 A. Consider the 650 V rating for general-purpose high-voltage applications where standard 600 V devices may lack sufficient margin.

Single FETs, MOSFETs Part Context

This part belongs to the MDmesh M5 family, which utilizes proprietary vertical processing combined with the PowerMESH horizontal layout structure. This architecture enables extremely low on-resistance relative to silicon area compared to previous generations. The PowerFLAT 8x8 HV package is designed for surface mounting, offering improved thermal performance over traditional through-hole packages while maintaining a compact profile suitable for dense PCB layouts.

Single FETs, MOSFETs Replacement Considerations

Direct replacements within the same series include STL31N65M5 for higher current capacity or STL21N65M5 for similar performance profiles. Verify pinout compatibility and thermal resistance values when substituting with other manufacturers' 650 V N-channel MOSFETs in the PowerFLAT or TO-252 packages.