STL3N65M2

Single FETs, MOSFETs Overview

The STL3N65M2 is an N-channel Power MOSFET from STMicroelectronics, utilizing MDmesh M2 technology. It features a 650 V drain-source voltage and a typical on-resistance of 1.6 ohms. The device supports a continuous drain current of 2.3 A and operates within a temperature range of -55°C to +150°C. Packaged in the compact PowerFLAT 3x3 format, it offers optimized switching characteristics suitable for high-efficiency power conversion applications.

Single FETs, MOSFETs Feature Summary

• MDmesh M2 technology provides low on-resistance and optimized switching performance
• PowerFLAT 3x3 package enables space-saving surface-mount design
• Enhanced thermal efficiency through leadless surface-mounted construction

Single FETs, MOSFETs Applications

• High-efficiency DC-DC converters
• Point-of-load power supplies
• Compact AC-DC adapter designs

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the official datasheet to confirm exact electrical tolerances and packaging options. Ensure compatibility with the target PCB footprint for the PowerFLAT 3x3 package. Confirm RoHS compliance status and check for any recent lifecycle notifications or obsolescence warnings directly from STMicroelectronics before finalizing procurement plans.

Single FETs, MOSFETs Selection Notes

Select this component when a compact form factor is required alongside moderate current handling capabilities. The 1.6 ohm on-resistance makes it suitable for lower current applications where minimizing board space is critical. Evaluate thermal management requirements carefully due to the small package size and ensure gate drive voltages remain within specified limits for optimal performance.

Single FETs, MOSFETs Part Context

This part belongs to the MDmesh M2 family of high-voltage power MOSFETs. It complements other devices in the series such as the STL10N65M2 and STL13N65M2, which offer higher current ratings but larger footprints. The MDmesh M2 technology represents a balance between conduction losses and switching speed for general-purpose high-voltage applications.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include other STL3N65M2 variants from STMicroelectronics with different tape-and-reel specifications. Cross-brand replacements require matching the 650 V rating, 3x3 mm package dimensions, and comparable Rds(on) values. Verify pinout compatibility and thermal resistance parameters before integrating alternative components.