STP11NM60

$4.16

Description：MOSFET N-CH 650V 11A TO220AB
Series：MDmesh™
Mfr：STMicroelectronics
Package：Tube

SKU:c8bb4075800a Category: Single FETs, MOSFETs Brand: STMicroelectronics

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Product introduction

STP11NM60 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 650V 11A TO220AB. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for STP11NM60

Description：MOSFET N-CH 650V 11A TO220AB
Series：MDmesh™
Mfr：STMicroelectronics
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：450mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id：5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：1000 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：160W (Tc)
Operating Temperature：-65°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220
Package / Case：TO-220-3

Single FETs, MOSFETs datasheet and documents for STP11NM60

STP11NM60

Single FETs, MOSFETs Overview

The STP11NM60 is an N-channel enhancement-mode power MOSFET from the MDmesh series, manufactured by STMicroelectronics. It features a maximum drain-source voltage (Vds) of 600 V and a continuous drain current (Id) of 11 A. The device utilizes TO-220 through-hole packaging with three pins. Key electrical parameters include a typical on-resistance (Rds(on)) of 400 mΩ, a gate charge (Qg) of approximately 30 nC at specified conditions, and a forward voltage (Vf) of 1.5 V. It operates within a temperature range of -55°C to 150°C, with a maximum power dissipation (Pd) of 90 W.

Single FETs, MOSFETs Feature Summary

MDmesh technology combining Multiple Drain process with PowerMESH horizontal layout for low on-resistance
High dv/dt and avalanche capabilities with 100% avalanche testing
Low input capacitance and gate charge for efficient switching
Low gate input resistance

Single FETs, MOSFETs Applications

ZVS phase-shift full bridge converters
Switching Mode Power Supplies (SMPS)
Welding equipment

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix against official datasheets, as variations may indicate different thermal or mechanical specifications without changing core function. Confirm RoHS compliance status and package type (TO-220) match design requirements. Check for active lifecycle status and availability constraints directly with authorized distributors or the manufacturer.

Single FETs, MOSFETs Selection Notes

Select this component for high-voltage applications requiring robust avalanche performance and fast switching characteristics. The MDmesh technology offers superior trade-offs between conduction losses and switching speed compared to standard planar technologies. Ensure thermal management solutions support the 90 W dissipation rating in the target operating environment.

Single FETs, MOSFETs Part Context

This part belongs to the MDmesh family of power MOSFETs, designed to address efficiency demands in medium-voltage switching applications. It represents a generation of devices utilizing advanced silicon processes to minimize on-state resistance while maintaining high reliability under harsh electrical stress conditions common in industrial power electronics.