STP35N65DM2

Single FETs, MOSFETs Overview

The STP35N65DM2 is an N-channel Power MOSFET from the MDmesh DM2 series, housed in a TO-220 package. It features a 650 V drain-source voltage and a maximum continuous drain current of 32 A at 25 °C case temperature. The device exhibits a typical on-resistance of 93 mΩ and a maximum of 110 mΩ. Key electrical parameters include a total gate charge of 56.3 nC, input capacitance of 2540 pF, and a peak diode recovery voltage slope of 100 V/ns. Thermal resistance from junction to case is 0.5 °C/W.

Single FETs, MOSFETs Feature Summary

• Fast-recovery body diode with low reverse recovery charge and time
• Extremely low gate charge and input capacitance for efficient switching
• 100% avalanche tested for robustness under inductive load conditions
• Zener-protected gate structure for enhanced reliability

Single FETs, MOSFETs Applications

• High-efficiency DC-DC converters
• Bridge topologies
• Zero Voltage Switching (ZVS) phase-shift converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code against the manufacturer's official datasheet to ensure correct component specifications. Confirm that the package type matches the required TO-220 form factor for your design. Check for any updated revision history or environmental compliance grades such as ECOPACK before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high-voltage handling with fast-switching capabilities. The low on-resistance minimizes conduction losses, while the fast-recovery body diode reduces switching losses in hard-switching applications. Ensure thermal management strategies account for the specified junction-to-case thermal resistance to maintain operation within safe limits.

Single FETs, MOSFETs Part Context

This part belongs to the MDmesh DM2 family of high-voltage N-channel Power MOSFETs. The series is engineered for demanding power conversion applications where efficiency and ruggedness are critical. The technology integrates advanced silicon structures to achieve superior performance metrics compared to standard MOSFETs in similar voltage classes.

Single FETs, MOSFETs Replacement Considerations

Consult official substitution lists for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence when considering cross-references.