STR2N2VH5

$0.99

Description：MOSFET N-CH 20V 2.3A SOT23
Series：STripFET™ V
Mfr：STMicroelectronics
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:f3fe43cbf3e1 Category: Single FETs, MOSFETs Brand: STMicroelectronics

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Product introduction

STR2N2VH5 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 20V 2.3A SOT23. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for STR2N2VH5

Description：MOSFET N-CH 20V 2.3A SOT23
Series：STripFET™ V
Mfr：STMicroelectronics
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：2.3A (Tj)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：30mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id：700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs：4.6 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：367 pF @ 16 V
FET Feature：-
Power Dissipation (Max)：350mW (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for STR2N2VH5

STR2N2VH5

Single FETs, MOSFETs Overview

The STR2N2VH5 is an N-channel enhancement-mode Power MOSFET from the STripFET H5 series, housed in a surface-mount SOT-23 package with three pins. It features a maximum drain-source voltage of 20 V and a continuous drain current of 2.3 A. The device exhibits a typical on-state resistance of 0.025 Ohm and a maximum gate threshold voltage of 1.1 V. Key electrical parameters include a maximum power dissipation of 350 mW, a typical gate charge of 6 nC at specified conditions, and an operating temperature range spanning from -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

Developed using STripFET H5 technology to achieve very low on-state resistance and high figure of merit.
Optimized for high avalanche ruggedness to withstand transient energy events.
Designed to minimize gate drive power loss during switching operations.

Single FETs, MOSFETs Applications

Low voltage DC-DC converters
High frequency inverters
Polarity protection circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact pinout configuration and thermal characteristics. Ensure that the selected component matches the required RoHS compliance status and packaging format for your assembly process. Cross-reference the datasheet revision date to validate parameter accuracy before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when a compact SOT-23 footprint is required alongside low conduction losses in 20 V applications. The high avalanche capability makes it suitable for inductive load switching where transient robustness is critical. Evaluate the thermal performance relative to the 350 mW dissipation limit under your specific ambient conditions.

Single FETs, MOSFETs Part Context

This part belongs to the STripFET H5 family, which utilizes advanced planar technology to optimize the balance between on-resistance and gate charge. The series targets portable electronics and battery-powered systems requiring efficient power management within minimal board space constraints.

Single FETs, MOSFETs Replacement Considerations

Consult the manufacturer's official substitution guide for verified equivalents. Do not assume functional compatibility with other STripFET variants without confirming pinout and electrical parameter alignment through official documentation.