STWA70N65DM6

$12.27

Description：MOSFET N-CH 650V 68A TO247
Series：MDmesh™ DM6
Mfr：STMicroelectronics
Package：Tube

SKU:2ca32c2f1ac5 Category: Single FETs, MOSFETs Brand: STMicroelectronics

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Product introduction

STWA70N65DM6 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists STMicroelectronics. Its product description is MOSFET N-CH 650V 68A TO247. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for STWA70N65DM6

Description：MOSFET N-CH 650V 68A TO247
Series：MDmesh™ DM6
Mfr：STMicroelectronics
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：68A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：40mOhm @ 34A, 10V
Vgs(th) (Max) @ Id：4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：125 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：4900 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：450W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-247 Long Leads
Package / Case：TO-247-3

Single FETs, MOSFETs datasheet and documents for STWA70N65DM6

STWA70N65DM6

Single FETs, MOSFETs Overview

The STWA70N65DM6 is an N-channel Power MOSFET utilizing MDmesh DM6 technology, housed in a TO-247 long leads package. It features a 650 V drain-source breakdown voltage and a maximum on-resistance of 40 mΩ at VGS = 10 V. The device supports a continuous drain current of 68 A at 25 °C case temperature and handles pulsed currents up to 260 A. Total power dissipation reaches 450 W at 25 °C. Key electrical parameters include a typical gate charge of 125 nC, input capacitance of 4900 pF, and reverse recovery time of 170 ns for the body diode.

Single FETs, MOSFETs Feature Summary

Fast-recovery body diode with low reverse recovery charge
Extremely high dv/dt ruggedness rated at 100 V/ns
Integrated Zener protection between gate and source
100% avalanche tested for robustness

Single FETs, MOSFETs Applications

High-efficiency bridge topologies
ZVS phase-shift converters
General switching applications

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code against the manufacturer's official documentation to ensure correct technical specifications. Confirm that the TO-247 long leads package variant matches the design requirements. Check the latest datasheet revision for any updates to absolute maximum ratings or thermal characteristics before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high-voltage handling with optimized switching performance. The MDmesh DM6 technology offers improved RDS(on) per area compared to previous generations. Ensure the application circuit can accommodate the specified gate charge and input capacitance values for optimal drive compatibility.

Single FETs, MOSFETs Part Context

This part belongs to the MDmesh DM6 series from STMicroelectronics, designed for demanding power conversion applications. It represents an advancement over earlier MDmesh fast generations by combining low recovery charge with excellent switching behavior. The device is specifically engineered to support high-efficiency converter topologies.