T4021N52TOHXPSA1

Overview

The T4021N52TOHXPSA1 is a silicon-based Silicon Controlled Rectifier (SCR) module manufactured by Infineon Technologies, designed for high-power phase control applications. It features a rated repetitive off-state voltage (VDRM) of 5.2 kV and a non-repetitive peak surge current capacity of 105 kA. The device operates within a junction temperature range of -40°C to +125°C and utilizes a press-fit mounting style in the T-17235K package. Key electrical parameters include a maximum holding current of 350 mA, a gate trigger voltage of 3.5 V, and a gate trigger current of 350 mA. The component exhibits a maximum leakage current of 900 mA under VDRM conditions.

Feature Summary

• Engineered for robust phase control circuits with high surge current handling capabilities
• Utilizes press-fit technology for secure mechanical connection without soldering
• Designed for stable operation across extreme industrial temperature ranges

Applications

• High-power industrial phase control systems
• Electrical triggering configurations requiring high voltage isolation
• Heavy-duty power conversion equipment

Procurement Notes

Verify the specific ordering suffix and manufacturer part number against official Infineon documentation before procurement. Confirm that the requested variant matches the exact electrical ratings and package type required for the design. Ensure compliance with RoHS directives and check for any specific automotive or industrial qualification requirements relevant to the target application environment.

Selection Notes

Select this component when designing systems requiring high voltage blocking capability and significant surge current tolerance. Consider the thermal management requirements associated with the specified junction temperature limits. Evaluate the gate drive circuitry to ensure it can reliably provide the necessary trigger voltage and current specifications for consistent switching performance.

Part Context

This SCR module belongs to Infineon's portfolio of high-power thyristor solutions intended for demanding industrial environments. It represents a specialized discrete semiconductor solution distinct from integrated driver ICs or low-voltage MOSFETs found in other product lines. The component serves as a critical switching element in high-voltage AC power control architectures.

Replacement Considerations

Consult official Infineon cross-reference guides for verified substitute part numbers. Do not assume compatibility based on similar voltage ratings alone; verify package dimensions, pin configurations, and thermal characteristics carefully.