Single Bipolar Transistors TIP127G product image

TIP127G

$1.19
  • Description:TRANS PNP DARL 100V 5A TO-220
  • Series:-

SKU:b0d8093eaf25 Category: Brand:

  
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TIP127G is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP DARL 100V 5A TO-220. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for TIP127G

  • Description:TRANS PNP DARL 100V 5A TO-220
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • Transistor Type:PNP - Darlington
  • Current - Collector (Ic) (Max):5:00 AM
  • Voltage - Collector Emitter Breakdown (Max):100 V
  • Vce Saturation (Max) @ Ib, Ic:4V @ 20mA, 5A
  • Current - Collector Cutoff (Max):500µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 3A, 3V
  • Power - Max:2 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for TIP127G

TIP127G

Single Bipolar Transistors Overview

The TIP127G is a PNP silicon Darlington power transistor from onsemi, housed in a TO-220AB package. It features a collector-emitter sustaining voltage of 100 Vdc and a continuous collector current rating of 5 Adc. The device offers a minimum DC current gain (hFE) of 1000 at specified test conditions. Total power dissipation reaches 65 W at a case temperature of 25°C. Built-in base-emitter shunt resistors are integrated within the monolithic construction.

Single Bipolar Transistors Feature Summary

  • Monolithic Darlington construction with integrated base-emitter shunt resistors
  • High DC current gain for efficient low-speed switching applications
  • Designed for general-purpose amplifier and switching tasks

Single Bipolar Transistors Applications

  • General-purpose amplifier circuits
  • Low-speed switching applications
  • Power transistor stages requiring high input impedance

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix to confirm lead-free status and packaging configuration. Confirm that the TO-220AB mechanical dimensions match the target PCB footprint. Ensure thermal management strategies account for the junction-to-case thermal resistance values provided in the datasheet specifications.

Single Bipolar Transistors Selection Notes

Select this component when a PNP Darlington configuration is required for moderate power handling. The 100 V rating suits applications exceeding lower voltage limits. Verify that the base drive current can supply the necessary input to achieve saturation given the high hFE characteristics defined in the electrical parameters.

Single Bipolar Transistors Part Context

This part belongs to the TIP12x complementary silicon transistor family manufactured by onsemi. The series includes NPN variants like the TIP120 and other PNP types such as the TIP125 and TIP126, differentiated primarily by their collector-emitter voltage ratings of 60 V, 80 V, and 100 V respectively.

Single Bipolar Transistors Replacement Considerations

TIP127

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage for the TIP127G?

The collector-emitter sustaining voltage (VCEO(sus)) is a minimum of 100 Vdc.

Does the TIP127G include internal resistors?

Yes, the device features monolithic construction with built-in base-emitter shunt resistors.

What is the typical DC current gain at high current?

The typical DC current gain (hFE) is 2500 at a collector current of 4.0 Adc.

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