Single FETs, MOSFETs TK12A50D(STA4,Q,M) product image

TK12A50D(STA4,Q,M)

$2.30
  • Description:MOSFET N-CH 500V 12A TO220SIS
  • Series:π-MOSVII
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tube

SKU:6e1a3a56271d Category: Brand:

  
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TK12A50D(STA4,Q,M) is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is MOSFET N-CH 500V 12A TO220SIS. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for TK12A50D(STA4,Q,M)

  • Description:MOSFET N-CH 500V 12A TO220SIS
  • Series:π-MOSVII
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):500 V
  • Current - Continuous Drain (Id) @ 25°C:12A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:520mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id:4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
  • Vgs (Max):±30V
  • Input Capacitance (Ciss) (Max) @ Vds:1350 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):45W (Tc)
  • Operating Temperature:150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-220SIS
  • Package / Case:TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for TK12A50D(STA4,Q,M)

TK12A50D(STA4,Q,M)

Single FETs, MOSFETs Overview

The TK12A50D(STA4,Q,M) is a single N-channel silicon MOSFET from Toshiba's π-MOSⅦ series, housed in the SC-67 (JEITA SC-67) through-hole package. It features a drain-source voltage of 500 V and a continuous DC drain current of 12 A at 25°C case temperature. The device exhibits a typical drain-source ON-resistance of 0.45 Ω and a forward transfer admittance of 6.0 S. Thermal resistance from channel to case is 2.78 °C/W, with a maximum channel temperature rating of 150°C.

Single FETs, MOSFETs Feature Summary

  • Utilizes Toshiba's π-MOSⅦ technology for low on-resistance and high switching performance
  • Capable of handling repetitive avalanche energy up to 4.5 mJ
  • Features a robust internal body diode with defined reverse recovery characteristics
  • Designed specifically for switching regulator applications

Single FETs, MOSFETs Applications

  • Switching Regulator Applications
  • DC-DC Converter Circuits
  • Power Supply Switching Stages

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix STA4,Q,M against official Toshiba documentation to confirm environmental compliance status, such as RoHS compatibility, as indicated by lot number markings. Ensure that procurement channels provide original manufacturer packaging to maintain component integrity during storage and handling.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring a 500 V breakdown voltage and a 12 A continuous current capacity in a TO-220 compatible footprint. Consider the thermal resistance of 2.78 °C/W for heatsinking requirements. Evaluate the gate threshold voltage range of 2.0 to 4.0 V to ensure compatibility with standard logic or driver levels.

Single FETs, MOSFETs Part Context

This part belongs to the TK12A50D product line manufactured by Toshiba Semiconductor and Storage. It is an enhancement-mode field-effect transistor designed for general-purpose power switching. The device is distinct from other variants in the series based on its specific voltage and current ratings within the π-MOSⅦ family.

Single FETs, MOSFETs Replacement Considerations

Consult official Toshiba substitution guides for verified equivalents. Cross-referencing requires matching the 500 V rating, 12 A current, SC-67 package, and electrical parameters like RDS(ON) and Qg to ensure functional interchangeability without derating circuit safety margins.

TK12A50D(STA4,Q,M)TK12A50D(STA4,Q,M)
$2.30
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