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TK12A50D(STA4,Q,M) is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is MOSFET N-CH 500V 12A TO220SIS. Review the specifications below when checking this part for your BOM.
The TK12A50D(STA4,Q,M) is a single N-channel silicon MOSFET from Toshiba's π-MOSⅦ series, housed in the SC-67 (JEITA SC-67) through-hole package. It features a drain-source voltage of 500 V and a continuous DC drain current of 12 A at 25°C case temperature. The device exhibits a typical drain-source ON-resistance of 0.45 Ω and a forward transfer admittance of 6.0 S. Thermal resistance from channel to case is 2.78 °C/W, with a maximum channel temperature rating of 150°C.
Verify the specific ordering suffix STA4,Q,M against official Toshiba documentation to confirm environmental compliance status, such as RoHS compatibility, as indicated by lot number markings. Ensure that procurement channels provide original manufacturer packaging to maintain component integrity during storage and handling.
Select this component when designing circuits requiring a 500 V breakdown voltage and a 12 A continuous current capacity in a TO-220 compatible footprint. Consider the thermal resistance of 2.78 °C/W for heatsinking requirements. Evaluate the gate threshold voltage range of 2.0 to 4.0 V to ensure compatibility with standard logic or driver levels.
This part belongs to the TK12A50D product line manufactured by Toshiba Semiconductor and Storage. It is an enhancement-mode field-effect transistor designed for general-purpose power switching. The device is distinct from other variants in the series based on its specific voltage and current ratings within the π-MOSⅦ family.
Consult official Toshiba substitution guides for verified equivalents. Cross-referencing requires matching the 500 V rating, 12 A current, SC-67 package, and electrical parameters like RDS(ON) and Qg to ensure functional interchangeability without derating circuit safety margins.
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