TK12A53D(STA4,Q,M)

$2.72

Description：MOSFET N-CH 525V 12A TO220SIS
Series：π-MOSVII
Mfr：Toshiba Semiconductor and Storage
Package：Tube

SKU:4b518d3b520b Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

TK12A53D(STA4,Q,M) is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is MOSFET N-CH 525V 12A TO220SIS. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for TK12A53D(STA4,Q,M)

Description：MOSFET N-CH 525V 12A TO220SIS
Series：π-MOSVII
Mfr：Toshiba Semiconductor and Storage
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：525 V
Current - Continuous Drain (Id) @ 25°C：12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：580mOhm @ 6A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：25 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：1350 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：45W (Tc)
Operating Temperature：150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220SIS
Package / Case：TO-220-3 Full Pack

Single FETs, MOSFETs datasheet and documents for TK12A53D(STA4,Q,M)

TK12A53D(STA4,Q,M)

Single FETs, MOSFETs Overview

The TK12A53D(STA4,Q,M) is a silicon N-channel MOSFET from Toshiba's π-MOS VII series, designed for switching regulator applications. It features a drain-source voltage (VDS) of 525 V and a continuous drain current (ID) of 12 A at 25°C. The device exhibits a typical drain-source ON-resistance (RDS(ON)) of 0.5 Ω and a forward transfer admittance (|Yfs|) of 6.0 S. Key electrical characteristics include a gate threshold voltage range of 2.0 to 4.0 V, a maximum gate leakage current of ±1 μA, and a total gate charge (Qg) of 25 nC. Thermal performance includes a channel-to-case thermal resistance of 2.78 °C/W and a maximum channel temperature of 150°C.

Single FETs, MOSFETs Feature Summary

Utilizes Toshiba's π-MOS VII technology to achieve low drain-source ON-resistance and high forward transfer admittance.
Supports repetitive avalanche energy ratings with specific pulse width limitations based on maximum channel temperature.
Features an enhancement-mode design with defined gate threshold voltage ranges for reliable switching control.

Single FETs, MOSFETs Applications

Switching regulators
DC-DC converters

Single FETs, MOSFETs Procurement Notes

Verify the exact ordering suffix against official Toshiba documentation to confirm package type and environmental compliance status. Confirm RoHS compatibility details directly with the manufacturer or authorized distributors as markings may vary by production lot. Ensure that procurement channels are authorized to guarantee component authenticity and traceability.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high-voltage handling up to 525 V combined with moderate current capabilities of 12 A. Consider the thermal resistance values when designing heat dissipation strategies for the TO-220SIS package. Evaluate the gate charge requirements against driver capabilities to ensure efficient switching performance in power supply circuits.

Single FETs, MOSFETs Part Context

This part belongs to the TK12A53D product line manufactured by Toshiba Semiconductor and Storage. It is classified as a single N-channel power MOSFET utilizing silicon technology. The component is housed in a through-hole SC-67 / TO-220SIS package, suitable for board-level mounting in power electronics applications.

Single FETs, MOSFETs Replacement Considerations

Consult official Toshiba documentation for verified substitute part numbers. Cross-reference specifications such as breakdown voltage, current rating, and thermal resistance carefully before considering alternatives.