TK12J60W,S1VE(S

Description：MOSFET N-CH 600V 11.5A TO3P
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tray

SKU:0f449c193303 Category: Single FETs, MOSFETs Brand: Toshiba Semiconductor and Storage

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Product introduction

TK12J60W,S1VE(S is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is MOSFET N-CH 600V 11.5A TO3P. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for TK12J60W,S1VE(S

Description：MOSFET N-CH 600V 11.5A TO3P
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tray
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：600 V
Current - Continuous Drain (Id) @ 25°C：11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：300mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id：3.7V @ 600µA
Gate Charge (Qg) (Max) @ Vgs：25 nC @ 10 V
Vgs (Max)：±30V
Input Capacitance (Ciss) (Max) @ Vds：890 pF @ 300 V
FET Feature：-
Power Dissipation (Max)：110W (Tc)
Operating Temperature：150°C
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-3P(N)
Package / Case：TO-3P-3, SC-65-3

Single FETs, MOSFETs datasheet and documents for TK12J60W,S1VE(S

TK12J60W,S1VE(S

Single FETs, MOSFETs Overview

The TK12J60W,S1VE(S is a through-hole N-channel power MOSFET from Toshiba's DTMOSIV series, housed in a TO-3P(N) package. It features a drain-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 11.5 A at 25°C ambient temperature. The device has a maximum gate-source voltage (Vgs) of ±30 V and a threshold voltage (Vgs(th)) of 3.7 V max at 600 µA. At 10 V gate drive, the on-resistance (Rds(on)) is 0.3 Ω max at 5.8 A. Power dissipation is rated at 110 W at case temperature. The input capacitance (Ciss) is 890 pF max at 300 V, with a gate charge (Qg) of 25 nC max at 10 V.

Single FETs, MOSFETs Feature Summary

DTMOSIV superjunction technology for high-efficiency switching
High breakdown voltage capability up to 600 V
Robust thermal performance in TO-3P(N) through-hole package

Single FETs, MOSFETs Applications

Switching voltage regulators
Motor control circuits
Power supply designs

Single FETs, MOSFETs Procurement Notes

Verify the exact suffix S1VE(S against official Toshiba documentation to confirm pinout and marking variations. Ensure compatibility with TO-3P(N) mounting hardware. Check RoHS3 compliance status for specific regional requirements. Confirm lead times as availability may fluctuate due to supply chain constraints.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring 600 V blocking voltage and moderate current handling in through-hole assemblies. Compare Rds(on) and Qg values against alternative DTMOSIV devices like the TK39J60W5,S1VQ for higher current needs. Evaluate thermal resistance requirements for the specific heatsinking solution.

Single FETs, MOSFETs Part Context

This part belongs to Toshiba's DTMOSIV family of silicon N-channel MOSFETs designed for server solutions and general power management. The TK12J60W variant specifically targets medium-power applications where through-hole reliability is preferred over surface mount alternatives like the TK12V60W,LVQ.