TLP191B(TPR,U,C,F)

Description：OPTOISO 2.5KV 1CH PHVOLT 6-MFSOP
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR)

SKU:05e8f3747271 Category: Transistor, Photovoltaic Output Optoisolators Brand: Toshiba Semiconductor and Storage

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Product introduction

TLP191B(TPR,U,C,F) is listed in the Transistor, Photovoltaic Output Optoisolators range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is OPTOISO 2.5KV 1CH PHVOLT 6-MFSOP. Review the specifications below when checking this part for your BOM.

Transistor, Photovoltaic Output Optoisolators specifications for TLP191B(TPR,U,C,F)

Description：OPTOISO 2.5KV 1CH PHVOLT 6-MFSOP
Series：-
Mfr：Toshiba Semiconductor and Storage
Package：Tape & Reel (TR)
Number of Channels：1
Voltage - Isolation：2500Vrms
Current Transfer Ratio (Min)：-
Current Transfer Ratio (Max)：-
Turn On / Turn Off Time (Typ)：200µs, 3ms
Rise / Fall Time (Typ)：-
Input Type：DC
Output Type：Photovoltaic
Voltage - Output (Max)：8V
Current - Output / Channel：24µA
Voltage - Forward (Vf) (Typ)：1.4V
Current - DC Forward (If) (Max)：50 mA
Vce Saturation (Max)：-
Operating Temperature：-40°C ~ 80°C
Mounting Type：Surface Mount
Package / Case：6-SMD (4 Leads), Gull Wing
Supplier Device Package：6-MFSOP, 4 Lead

Transistor, Photovoltaic Output Optoisolators datasheet and documents for TLP191B(TPR,U,C,F)

TLP191B(TPR,U,C,F)

Transistor, Photovoltaic Output Optoisolators Overview

The TLP191B(TPR,U,C,F) is a Toshiba Semiconductor and Storage photocopler featuring a GaAlAs infrared LED optically coupled to a photo-diode array with an integrated shunt resistor. Designed for surface mount assembly in a mini flat package, it provides high isolation voltage of 2500 Vrms minimum. The device supports a maximum forward current of 30 mA and delivers a minimum open voltage of 7.0 V. It exhibits a short circuit current of at least 24.0 μA and operates within a temperature range of -40°C to 85°C.

Transistor, Photovoltaic Output Optoisolators Feature Summary

Integrates a GaAlAs infrared LED with a series-connected photo-diode array and shunt resistor for efficient MOS FET gate drive applications.
Provides robust electrical isolation with a minimum isolation voltage of 2500 Vrms between input and output circuits.
Features a compact mini flat outline suitable for automated surface mount assembly processes.

Transistor, Photovoltaic Output Optoisolators Applications

MOS FET gate driver circuits
Telecommunication systems
Programmable controllers

Transistor, Photovoltaic Output Optoisolators Procurement Notes

Verify the specific suffix configuration (TPR, U, C, F) against official Toshiba documentation to ensure correct packaging and tape specifications. Confirm that the component meets UL recognition requirements under file number E67349 for intended safety certifications. Cross-reference the datasheet parameters for open voltage and short current to validate performance in target gate drive designs.

Transistor, Photovoltaic Output Optoisolators Selection Notes

Select this component when a dedicated MOS FET gate drive solution is required with high isolation capabilities. The integrated shunt resistor simplifies circuit design by eliminating external components typically needed for diode arrays. Ensure the operating temperature range of -40°C to 85°C aligns with the environmental conditions of the application system.

Transistor, Photovoltaic Output Optoisolators Part Context

This part belongs to the TLP191 series of mini flat photocouplers manufactured by Toshiba Semiconductor and Storage. The series is characterized by its small outline form factor and specialized internal structure combining light emission with photo-detection and resistance. It serves as a bridge component in power electronics for signal transmission across isolated boundaries.