TP65H100G4LSGB-TR

Single FETs, MOSFETs Overview

The TP65H100G4LSGB-TR is a single-channel N-channel Gallium Nitride (GaN) field-effect transistor from Renesas Electronics, part of the Gen IV SuperGaN series. It features a 650V drain-source breakdown voltage and a typical on-resistance of 110 milliohms. The device supports a continuous drain current of 18.9A and operates within a temperature range of -55°C to +150°C. Packaged in an 8x8mm PQFN-8 footprint, it utilizes a standard enhancement mode with a threshold voltage of 4.1V and a gate charge of 14.4nC.

Single FETs, MOSFETs Feature Summary

• Utilizes Gen IV SuperGaN technology for enhanced switching performance
• Designed for high-efficiency power conversion applications
• Features a compact 8x8mm PQFN-8 surface-mount package

Single FETs, MOSFETs Applications

• Consumer power adapters
• Low power switched-mode power supplies (SMPS)
• Lighting systems
• Power over Ethernet (PoE) interfaces

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix TR indicates reel packaging when sourcing. Confirm RoHS compliance status through official documentation. Ensure compatibility with standard GaN driver requirements due to the 4.1V threshold voltage. Check for moisture sensitivity labeling as indicated in component specifications.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring low conduction losses at 650V ratings. The 110mOhm resistance suits moderate current applications up to 18.9A. Consider the 8x8mm package for space-constrained PCB layouts. Validate thermal management capabilities given the 150°C maximum operating temperature limit.

Single FETs, MOSFETs Part Context

This part belongs to the Transphorm/Renesas Gen IV SuperGaN family, representing fourth-generation enhancement-mode GaN transistors. These devices are engineered to replace traditional silicon MOSFETs in high-frequency power stages, offering superior efficiency and power density characteristics compared to earlier generations.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include other Gen IV SuperGaN parts with similar Rds(on) and Vds ratings, such as the TP65H300G4LSGBE-TR for higher resistance variants. Verify pinout compatibility and thermal pad configurations before substitution.