TPHR6503PL1,LQ

Single FETs, MOSFETs Overview

The TPHR6503PL1 is a silicon N-channel enhancement mode MOSFET from Toshiba's U-MOSIX-H series. It features a SOP Advance(N) package with eight pins, where pins 1, 2, and 3 serve as the source, pin 4 is the gate, and pins 5 through 8 are the drain. The device supports a maximum drain-source voltage of 30 V and a continuous DC drain current of 150 A at 25°C case temperature. Key electrical parameters include a typical on-resistance of 0.41 mΩ at VGS = 10 V, a gate threshold voltage range of 1.1 to 2.1 V, and a maximum leakage current of 10 µA. It operates within a channel temperature range of -55°C to 175°C.

Single FETs, MOSFETs Feature Summary

• High-speed switching capability for efficient power conversion
• Minimized gate charge and output charge to reduce switching losses
• Low drain-source on-resistance for improved conduction efficiency
• Enhanced mode operation with defined gate threshold voltage

Single FETs, MOSFETs Applications

• High-efficiency DC-DC converters
• Switching voltage regulators

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging and marking specifications. Confirm that the component meets all relevant environmental compliance standards required for your specific application before finalizing procurement. Cross-reference the datasheet revision date with your supply chain records to guarantee you receive the most current version of the device.

Single FETs, MOSFETs Selection Notes

Select this component based on its low on-resistance and fast switching characteristics suitable for high-frequency power management. Ensure the thermal design accommodates the specified thermal resistance values under expected load conditions. Verify that the gate drive voltage aligns with the device's threshold and maximum ratings to optimize performance and reliability in the target circuit design.

Single FETs, MOSFETs Part Context

This part belongs to the TPHR6503PL series manufactured by Toshiba Semiconductor and Storage. It utilizes the U-MOSIX-H technology platform, which is designed for advanced power switching applications. The SOP Advance(N) package provides a compact footprint with robust thermal dissipation capabilities, making it suitable for space-constrained designs requiring high current handling.

Single FETs, MOSFETs Replacement Considerations

Consult the official Toshiba replacement guide or contact technical support for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' devices without verifying pinout, electrical ratings, and thermal characteristics.

Single FETs, MOSFETs FAQ

What is the internal pin configuration of the SOP Advance(N) package?

Pins 1, 2, and 3 are connected to the Source, Pin 4 is the Gate, and Pins 5, 6, 7, and 8 are connected to the Drain.

What is the typical total gate charge (Qg) for this device?

The typical total gate charge is 110 nC when tested at VDD ≈ 15 V, VGS = 10 V, and ID = 50 A.