Single FETs, MOSFETs TPN7R504PL,LQ product image

TPN7R504PL,LQ

$0.77
  • Description:MOSFET N-CH 40V 38A 8TSON
  • Series:U-MOSIX-H
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:0642933576fc Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

TPN7R504PL,LQ is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is MOSFET N-CH 40V 38A 8TSON. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for TPN7R504PL,LQ

  • Description:MOSFET N-CH 40V 38A 8TSON
  • Series:U-MOSIX-H
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:38A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:7.5mOhm @ 19A, 10V
  • Vgs(th) (Max) @ Id:2.4V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs:24 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:2040 pF @ 20 V
  • FET Feature:-
  • Power Dissipation (Max):610mW (Ta), 61W (Tc)
  • Operating Temperature:175°C
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:8-TSON Advance (3.1x3.1)
  • Package / Case:8-PowerVDFN

Single FETs, MOSFETs datasheet and documents for TPN7R504PL,LQ

TPN7R504PL,LQ

Single FETs, MOSFETs Overview

The TPN7R504PL,LQ is a single N-channel power MOSFET manufactured by Toshiba Semiconductor and Storage. It utilizes the U-MOSIX-H technology and is housed in a TSON-8 surface-mount package. The device features a drain-source breakdown voltage of 40 V and a continuous drain current rating of 68 A. Its on-resistance is specified at 7.5 mOhms, with a gate threshold voltage of 1.4 V and a total gate charge of 24 nC. The component supports a maximum power dissipation of 61 W and operates within a temperature range of -55 C to +175 C.

Single FETs, MOSFETs Feature Summary

  • Incorporates U-MOSIX-H technology for enhanced performance characteristics.
  • Designed for surface-mount installation using the TSON-8 package format.
  • Features an enhancement mode single N-channel configuration.

Single FETs, MOSFETs Applications

    Single FETs, MOSFETs Procurement Notes

    Verify the specific ordering suffix LQ against official Toshiba documentation to confirm tape and reel specifications. Ensure compatibility with standard SMD/SMT assembly processes. Confirm RoHS compliance status through the manufacturer's detailed datasheet before finalizing procurement plans.

    Single FETs, MOSFETs Selection Notes

    Select this component when a low-voltage, high-current switching solution is required in a compact footprint. The 40 V rating and 68 A capability suit applications needing efficient power handling. The TSON-8 package facilitates automated placement while maintaining thermal performance suitable for dense circuit board layouts.

    Single FETs, MOSFETs Part Context

    This part belongs to the TPN7R504PL series from Toshiba Semiconductor and Storage. It represents a silicon-based enhancement mode MOSFET designed for modern electronic systems requiring reliable power switching capabilities within strict size constraints.

    Single FETs, MOSFETs Replacement Considerations

    No public confirmed substitute part numbers are available for this component.

    TPN7R504PL,LQTPN7R504PL,LQ
    $0.77
    Buy Now

    Recent News