TSA874CW RPG

Single Bipolar Transistors Overview

The TSA874CW RPG is a PNP silicon planar high voltage transistor housed in an SOT-223 package. It features a collector-base and collector-emitter breakdown voltage of -500V, with a DC collector current rating of -150mA. The device exhibits low saturation voltages, specifically -0.5V at a collector current of -50mA and base current of -10mA. Electrical characteristics include a DC current transfer ratio (hFE) ranging from 80 to 300 at -50mA, and a transition frequency of 50MHz at -100mA. Total power dissipation is rated at 1W, with an operating junction temperature up to +150°C.

Single Bipolar Transistors Feature Summary

• Epitaxial planar structure designed for high voltage applications
• Low saturation voltage characteristics for efficient switching
• Excellent gain performance specified up to -50mA collector current

Single Bipolar Transistors Applications

• High voltage switching circuits
• General purpose amplifier stages
• Driver circuits requiring high voltage tolerance

Single Bipolar Transistors Procurement Notes

Verify the part number against the official datasheet DS_P0000260 Version H15 to ensure compatibility. Confirm that the ordering suffix 'RPG' corresponds to the specified packing quantity and halogen-free status as documented by Taiwan Semiconductor Corporation. Cross-reference electrical limits with your specific circuit requirements before finalizing procurement decisions.

Single Bipolar Transistors Selection Notes

Select this component when a PNP transistor with -500V breakdown voltage is required. Ensure the application current does not exceed the -150mA DC limit or -500mA pulse limit. Consider the thermal management capabilities given the 1W total power dissipation rating and the SOT-223 package constraints for your specific heat sink or PCB layout design.

Single Bipolar Transistors Part Context

This component belongs to the TSA874 series of PNP silicon planar transistors manufactured by Taiwan Semiconductor Corporation. The series is characterized by its high voltage capability and robust construction suitable for demanding electronic environments. The specific model utilizes an SOT-223 surface-mount package, integrating the semiconductor die into a standardized form factor for automated assembly processes.

Single Bipolar Transistors Replacement Considerations

Consult official substitution guides from Taiwan Semiconductor Corporation for verified equivalents. Do not assume cross-compatibility with other manufacturers' parts without verifying pinout, voltage ratings, and thermal characteristics against the original specifications.

Single Bipolar Transistors FAQ

What is the maximum collector-base breakdown voltage?

The maximum collector-base breakdown voltage (BV_CBO) is -500V.

What is the typical DC current gain at -50mA?

The DC current transfer ratio (h_FE) ranges from 80 to 300 when the collector current is -50mA.

What is the package type for this transistor?

The TSA874CW RPG is available in an SOT-223 package.