TSM2305CX RFG

$0.75

Description：MOSFET P-CHANNEL 20V 3.2A SOT23
Series：-
Mfr：Taiwan Semiconductor Corporation
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:9f371361d147 Category: Single FETs, MOSFETs Brand: Taiwan Semiconductor Corporation

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Product introduction

TSM2305CX RFG is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Taiwan Semiconductor Corporation. Its product description is MOSFET P-CHANNEL 20V 3.2A SOT23. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for TSM2305CX RFG

Description：MOSFET P-CHANNEL 20V 3.2A SOT23
Series：-
Mfr：Taiwan Semiconductor Corporation
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：55mOhm @ 3.2A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10 nC @ 10 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：990 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：1.25W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23
Package / Case：TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for TSM2305CX RFG

TSM2305CX RFG

Single FETs, MOSFETs Overview

The TSM2305CX RFG is a single P-channel power MOSFET manufactured by Taiwan Semiconductor Corporation. It features a maximum drain-source voltage (Vdss) of 20 V and a continuous drain current (Id) of 3.2 A at 25°C ambient temperature. The device exhibits a maximum on-resistance (Rds(on)) of 75 mΩ at Vgs = -4.5 V and 100 mΩ at Vgs = -2.5 V. Gate threshold voltage is specified at 900 mV @ 250 µA. Power dissipation reaches 1.25 W at Ta=25°C. It operates within a junction temperature range of -55°C to 150°C and is housed in an SOT-23 surface-mount package.

Single FETs, MOSFETs Feature Summary

Designed for low-voltage, high-speed switching applications
Optimized gate drive characteristics suitable for -2.5 V logic levels
Halogen-free construction compliant with environmental standards

Single FETs, MOSFETs Applications

Low-side load switching circuits
Power management modules
Battery protection systems

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and moisture sensitivity level (MSL) ratings prior to assembly. Ensure storage conditions adhere to J-STD-020 guidelines to prevent damage. Validate part markings against official datasheet specifications to avoid counterfeit risks during procurement.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring compact P-channel switching in space-constrained environments. Evaluate thermal performance based on the 1.25 W dissipation limit at ambient temperature. Consider the 75 mΩ on-resistance for efficiency calculations under standard 4.5 V gate drive conditions. Verify compatibility with system voltage levels not exceeding 20 V.

Single FETs, MOSFETs Part Context

This device belongs to the TSM23xx series of P-channel MOSFETs from Taiwan Semiconductor. It shares the SOT-23 form factor with related models like the TSM2311CX but offers specific electrical characteristics tailored for 20 V applications. The series emphasizes cost-effective solutions for consumer electronics and portable devices requiring reliable power control.